NSC 5962-9684302VXA, 5962-9684301VZA, 5962-9684301VXA Datasheet

TL/H/5713

LM113/LM313 Reference Diode

December 1994

LM113/LM313 Reference Diode

General Description

The LM113/LM313 are temperature compensated, low volt­age reference diodes. They feature extremely-tight regula­tion over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature
stability.

The diodes are synthesized using transistors and resistors
in a monolithic integrated circuit. As such, they have the
same low noise and long term stability as modern IC op
amps. Further, output voltage of the reference depends only
on highly-predictable properties of components in the IC; so
they can be manufactured and supplied to tight tolerances.

Features

Y

Low breakdown voltage: 1.220V

Y

Dynamic impedance of 0.3X from 500 mAto20mA

Y

Temperature stability typically 1% overb55§Cto125§C
range (LM113), 0

§

Cto70§C (LM313)

Y

Tight tolerance:g5%,g2% org1%

The characteristics of this reference recommend it for use in
bias-regulation circuitry, in low-voltage power supplies or in
battery powered equipment. The fact that the breakdown
voltage is equal to a physical property of siliconÐthe ener­gy-band gap voltageÐmakes it useful for many tempera­ture-compensation and temperature-measurement func­tions.

Schematic and Connection Diagrams

Metal Can Package

Order Number

LM113H, LM113H/883,
LM113-1H, LM113-1H/883,
LM113-2H, LM113-2H/883,

or LM313H

See NS Package Number H02A

TL/H/5713– 1

Typical Applications

Level Detector for Photodiode

Low Voltage Regulator

²

Solid tantalum.

TL/H/5713– 2

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
(Note 3)

Power Dissipation (Note 1) 100 mW

Reverse Current 50 mA

Forward Current 50 mA

Storage Temperature Range

b

65§Ctoa150§C

Lead Temperature

(Soldering, 10 seconds) 300

§

C

Operating Temperature Range

LM113

b

55§Ctoa125§C

LM313 0

§

Ctoa70§C

Electrical Characteristics (Note 2)

Parameter Conditions Min Typ Max Units

Reverse Breakdown Voltage

LM113/LM313

I

R

e

1mA

1.160 1.220 1.280 V
LM113-1 1.210 1.22 1.232 V
LM113-2 1.195 1.22 1.245 V

Reverse Breakdown Voltage

0.5 mA

s

I

R

s

20 mA 6.0 15 mV

Change

Reverse Dynamic Impedance

I

R

e

1 mA 0.2 1.0 X

I

R

e

10 mA 0.25 0.8 X

Forward Voltage Drop I

F

e

1.0 mA 0.67 1.0 V

RMS Noise Voltage

10 Hz

sfs

10 kHz

5 mV

I

R

e

1mA

Reverse Breakdown Voltage 0.5 mAsI

R

s

10 mA

15 mV

Change with Current T

MIN

s

T

A

s

T

MAX

Breakdown Voltage Temperature 1.0 mAsI

R

s

10 mA

0.01 %/

§

C

Coefficient T

MIN

s

T

A

s

T

MAX

Note 1: For operating at elevated temperatures, the device must be derated based on a 150§C maximum junction and a thermal resistance of 80

§

C/W junction to

case or 440

§

C/W junction to ambient.

Note 2: These specifications apply for T

A

e

25§C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than (/4
inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1 mF, unless isolated by at
least a 100X resistor, as it may oscillate at some currents.

Note 3: Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113.

Typical Performance Characteristics

Temperature Drift Reverse Dynamic Impedance Reverse Characteristics

TL/H/5713– 3

2