NEC UPG138GV-E1, UPG138GV Datasheet
DATA SHEET
GaAs INTEGRATED CIRCUIT
PPPP
PG138GV
L-BAND SPDT SWITCH
DESCRIPTION
The PPG138GV is L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
mobile communication system.
It housed in an very small 8-pin SSOP that is smaller than usual 8-pin SOP and easy to install and contributes to
miniaturizing the system.
FEATURES
• Maximum transmission power : +35 dBm min. (@ V
+34 dBm typ. (@ V
• Low insertion loss : 0.55 dB typ. (@ 1 GHz)
0.65 dB typ. (@ 2 GHz)
CONT
= ð5 V/0 V: PPG138GV
CONT
= ð3 V/0 V: PPG138GV)
)
APPLICATION
• Digital Cellular : GSM, PDC, PCN etc.
• PHS Base Station, PCS etc.
ORDERING INFORMATION
PART NUMBER PACKAGE PACKING FORM
P
PG138GV-E1 8-pin plastic SSOP (175 mil) Carrier tape width 12 mm Qty 2 kp/Reel.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETERS SYMBOL RATINGS UNIT
Control Voltage 1, 2 V
Input Power (V
Input Power (V
Total Power Dissipation P
Operating Temperature T
Storage Temperature T
CONT
= ð5 V) P
CONT
= ð3 V) P
CONT1, 2
in
in
tot
opt
stg
ð
6.0 to +0.6 V
+36 dBm
+34 dBm
0.7 W
ð
50 to +80 °C
ð
65 to +150 °C
Document No. P13058EJ2V0DS00 (2nd edition)
(Previous No. P11508EJ1V0DS00)
Date Published December 1997 N CP(K)
Printed in Japan
1996©
PIN CONNECTION DIAGRAM (Top View)
PPPP
PG138GV
1
2
3
4
G138
8
7
6
5
CONT2
1. V
2. OUT2
3. GND
4. GND
5. IN
6. GND
7. OUT1
CONT1
8. V
SPDT SWITCH IC SERIES PRODUCTS
PART
NUMBER
PG130G +34 0.5 @ 1 G 32 @ 1 G
P
PG131G +30 0.6 @ 2 G 23 @ 2 G
P
PG132G +30 0.6 @ 2 G 22 @ 2 G +3/0 PHS, DIVERSITY
P
PG133G +25 0.6 @ 2 G 20 @ 2 G
P
PG137GV +34 0.55 @ 1 G 25 @ 2 G +3/0 PDC, GSM, IS-136
P
PG138GV +34
P
PIN (1 dB)
(dBm)
+38
LINS (dB) ISL (dB) VCONT (V) PACKAGE APPLICATIONS
5/0 PDC, IS-54, PHS
ð
4/0 PHS, DIVERSITY
ð
8 pins SSOP
3/0 DIVERSITY, VCO
0.55 @ 1 G 30 @ 1 G
ð
3/0
ð
5/0
ð
(175 mil)
PDC, GSM, IS-136
Remark
As for detail information of series products, please refer to each data sheet.
2
[
PG138GV]
PPPP
RECOMMENDED OPERATION CONDITIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
PPPP
PG138GV
Control Voltage (ON) V
Control Voltage (OFF) V
Input Power (V
Input Power (V
CONT
= ð5 V) P
CONT
= ð3 V) P
CONT
CONT
in
in
0.2 0 +0.2 V
ð
5.3
ð
3.0
ð
2.7 V
ð
+35 dBm
+33 dBm
ELECTRICAL CHARACTERISTICS
(UNLESS OTHERWISE SPECIFIED TA = 25
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Insertion Loss 1 L
Insertion Loss 2 L
Insertion Loss 3 L
Isolation 1 I
Isolation 2 I
Input Return Loss RL
Output Return Loss RL
Input Power at 1 dB Pin (1 dB) f = 500 M to 2 GHz +32 +34 dBm
Compression Point
Switching Speed t
Control Current I
INS1
INS2
INS3
SL1
SL2
in
out
Note 2
SW
CONT
f = 2.0 GHz 0.65 0.90 dB
f = 2.5 GHz
f = 2.0 GHz 18 20 dB
f = 100 M to 2 GHz 11 dB
f = 500 M to 2 GHz,
CONT
V
CONT
V
CONT
C, V
qqqq
=
3 V/0 V, f = 100 MHz to 1 GHz)
ðððð
0.55 0.75 dB
Note 1
0.8
25 30 dB
11 dB
+34 +38 dBm
= ð5 V/0 V
10 ns
= ð5 V/0 V 5
dB
P
A
Notes 1.
Characteristic for reference at 2.0 to 2.5 GHz.
in
P
(1 dB) is measured the input power level when the insertion loss increase more 1 dB than that of
2.
linear range.
All other characteristics are measured in linear range.
NOTE ON CORRECT USE
• Insertion loss and isolation of the IN-OUT2 is better than that of IN-OUT1, because No. 7 pin (OUT1) is placed to
same side of No. 5 pin (IN).
• The distance between IC’s GND pins and ground pattarn of substrate should be as shorter as possible to avoid
parasitic parameters.
3
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