PRELIMINARY DATA SHEET
µµµµ
©
GaAs INTEGRATED CIRCUIT
PG2121TB
L-BAND UP/DOWN CONVERTER
DESCRIPTION
The µPG2121TB is L-band up-converter or down-converter IC (LO Buff. Amp. + Passive Mixer). The device can
convert the RF frequency to IF frequency and operate low current. It housed in an original 6-pin super minimold
package that is smaller than usual 6-pin minimold easy to install and contributes to miniaturizing the system.
FEATURES
• +2.8 V single voltage
• Low distortion (IIP3 = +23 dBm TYP.)
• Low current operation (IDD = 3.5 mA TYP.)
• LO buffer amplifier and passive mixer on a single chip
• 6-pin super minimold package (Size: 2.0 × 1.25 × 0.9 mm)
APPLICATION
• L-band digital cellular etc.
ORDERING INFORMATION
Part Number Package Marking Supplying Form
µ
PG2121TB-E3 6-pin super minimold G2E Embossed tape 8 mm wide.
Pin 1 face the tape perforation side.
Qty 3kpcs / reel.
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
PG2121TB)
µ
Caution The IC must be handled with care to prevent static discharge because its circuit composed of
GaAS HJ-FET.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15014EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan
2000
PIN CONNECTIONS
Pin No. Connection Pin No. Connection
1 RF or IF 4 LO IN
2 GND 5 GND
3VDD6IF or RF
Top View Bottom View Top View
µµµµ
PG2121TB
3
2
1
4
5
G2E
6
4
5
6
ABSOLUTE MAXIMUM RATINGS (TA = +25
Parameter Symbol Ratings Unit
Supply Voltage V
LO Input Power P
RF Input Power P
Total Power Dissipation P
Operating Ambient Temperature T
Storage Temperature T
Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, T
Note
DD
LO
RF
tot
A
stg
3
2
1
C)
°°°°
6.0 V
+10 dBm
+10 dBm
Note
140
−
30 to +90
−
35 to +150
mW
°
C
°
C
3
2
1
A
= +85 °C
4
5
6
2
Preliminary Data Sheet P15014EJ1V0DS00
µµµµ
PG2121TB
ELECTRICAL CHARACTERISTICS (TA = +25
Parameter Symbol MIN. TYP. MAX. Unit
Supply Voltage V
RF Frequency f
IF Frequency f
LO Input Power P
DD
RF
IF
LO
+2.7 +2.8 +3.0 V
810
50
−
10
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
LO
f
= 940 MHz, PLO =
Parameter Symbol Test Condition MIN. TYP . MAX. Unit
Total Current I
Conversion Loss L
3rd Order Distortion Input Int erc ept
Note
Point
3rd Order Intermoduration Distorti on IM
Local Leackage L
5 dBm, fIF = 90 MHz, f
−−−−
A
= +25
C, VDD = 2.8 V, f
°°°°
IM3
DD
C
3
IIP
3
LO
= 90.1 MHz)
C)
°°°°
−
−
−
50dBm
960 MHz
400 MHz
RF1
= 850 MHz, f
RF2
= 850.1 MHz, P
−
−−
+18 +23
−−52−
−−13−
RF1
RF2
= P
=
3 dBm,
−−−−
3.5 4.5 mA
6.0
−
7.5 dB
−
42 dBc
11 dBm
dBm
3
is determined by comparing two method; theoretical calculation and cross point of IM3 curve.
IIP
Note
IM3 × PRF + CG − P
IIP3 = [dBm]
∆
IM3 − 1
∆
Calculated as ∆IM3 = 3
IM3
IM3: P
∆
IM3
gradient
Preliminary Data Sheet P15014EJ1V0DS00
3
EVALUATION CIRCUIT
TA = +25 °C, VDD = +2.8 V, f = 850 MHz
L
IF
µµµµ
PG2121TB
1
L
2
V
DD
2
C
C
1
123
C
3
G2E
654
L
RF
4
C
4
L
EVALUATION BOARD USING THE NEC EVALUATION BOARD
V
DD
C
IF
C
3
C
2
C
1
L
2
L
1
C
4
L
L
4
3
C
C
C
L
L
L
L
3
LO
Values Part Number Maker
1
5 pF GRM39CH 050 C50 muRata
2
33 pF GRM36CH 330 J50 muRata
3
1 000 pF GRM39B 102 K50 muRata
4
5 pF GRM39CH 050 C50 muRata
1
6.8 nH TFL0510 6N8 s usumu
2
15 nH TFL0816 15N susumu
3
27 nH TFL0816 27N susumu
4
6.8 nH TFL0816 6N8 s usumu
RF
4
LO
Preliminary Data Sheet P15014EJ1V0DS00
µµµµ
PG2121TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
TOTAL CURRENT, CONVERSION LOSS,
IIP
IF OUTPUT POWER, IM
3,
TOTAL CURRENT vs. RF INPUT POWER
10
V
DD = 2.8 V, fRF = 850 MHz,
0
LO = 940 MHz, fIF = 90 MHz,
f
LO = –5 dBm
P
–10
–20
–30
IF (dBm), 3rd Order
–40
–50
–60
–70
–80
Intermoduration Distortion IM3 (dBc)
IF Output Power P
–90
–20–25
–15 –10 –5 0 5 10 15 –25 –20 –15 –10 –5 0 5 10 15
RF Input Power PRF (dBm) Local Input Power PLO (dBm)
PIF
IM3
IDD
10
9
8
7
DD (mA)
6
5
4
3
Total Current I
2
1
00
3, NOISE FIGURE, IM3, LOCAL LEAKAGE
vs. LOCAL INPUT POWER
30
3 (dBm),
25
20
15
10
DD (mA), Conversion Loss LC (dB),
5
Total Current I
3rd Order Distortion Input Intercept Point IIP
Noise Figure NF (dB)
LLO
NF
IDD
TOTAL CURRENT, CONVERSION
LOSS, IIP
3, IM3, LOCAL LEAKAGE,
vs. RF FREQUENCY
30
3 (dBm)
25
20
15
IIP3
LLO
IM3
VDD = 2.8 V, fLO = 895 to 985 MHz,
RF1 = 850 MHz, fRF2 = 850.1 MHz,
f
IF = 90 MHz, PRF = –3 dBm,
f
LO = –5 dBm
P
0
3 (dBc),
–20
–40
–60
C)
°°°°
0
3 (dBc),
IIP
3
–20
–40
IM3
–60
VDD = 2.8 V, fRF = 850 MHz,
LO = 940 MHz, fIF = 90 MHz,
f
RF = –3 dBm
P
LC
–80
–100
–120
LO (dBm)
3rd Order Intermoduration Distortion IM
Local Leackage L
10
DD (mA), Conversion Loss LC (dB),
5
LC
IDD
0
800
810 820 830 840 850 860 870 880 890 900
3rd Order Distortio Input Intercept Point IIP
Total Current I
Remark
The graphs indicate nominal characteristics.
RF Frequency f
RF (MHz)
–80
–100
–120
3rd Order Intermoduration Distortion IM
Local Leackage LLO (dBm)
Preliminary Data Sheet P15014EJ1V0DS00
5
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
1.3
2.0±0.2
0.9±0.1
0.650.65
0.7
2.1±0.1
1.25±0.1
–0.05
+0.1
0.2
0.1 MIN.
–0.05
+0.1
0.15
µµµµ
PG2121TB
0 to 0.1
6
Preliminary Data Sheet P15014EJ1V0DS00
µµµµ
PG2121TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Soldering Conditions Recommended Condition Symbol
Infrared Reflow Package peak temperature: 235 ° C or bel ow
Time: 30 seconds or less (at 210 °C)
Count: 3, Exposure limi t: None
VPS Package peak temperature: 215 ° C or bel ow
Time: 40 seconds or less (at 200 °C)
Count: 3, Exposure limi t: None
Wave Soldering Soldering bath temperature: 260 ° C or bel ow
Time: 10 seconds or less
Count: 1, Exposure limi t: None
Partial Heating Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Exposure limit: None
After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Note
Note
Note
Note
Note
IR35-00-3
VP15-00-3
WS60-00-1
–
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Preliminary Data Sheet P15014EJ1V0DS00
7
µµµµ
PG2121TB
CAUTION
The great care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
•
The information in this document is current as of July, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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