CCD linear image sensor 24-pin ceramic DIP (600 mil)
µ
PD3725A
PHOTOCELL STRUCTURE DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
ParameterSymbolRatingsUnit
Output drain voltageVOD–0.3 to +15V
µ
PD3725A
Shift register clock voltageV
Reset signal voltageV
Transfer gate signal voltageV
φ
1, Vφ2–0.3 to +15V
φ
R1B, VφR2B–0.3 to +15V
φ
TG–0.3 to +15V
Operating ambient temperatureTA–25 to +60°C
Storage temperatureTstg–40 to +100°C
Caution Exposure to Absolute Maximum Rating for extended periods may affect device reliability; exceeding
the ratings could cause permanent damage. The parameters apply independently.
RECOMMENDED OPERATING CONDITIONS (TA = +25 °C)
ParameterSymbolMIN.TYP.MAX.Unit
Output drain voltageVOD11.412.012.6V
Shift register clock signal high levelV
Shift register clock signal low levelV
Reset signal high levelV
Reset signal low levelV
Transfer gate signal high levelV
φ
1H, Vφ2H4.555.5V
φ
1L, Vφ2L–0.30+0.5V
φ
R1BH, VφR2BH4.555.5V
φ
R1BL, VφR2BL–0.30+0.5V
φ
TGH4.555.5V
Transfer gate signal low levelV
Data rate2 × f
Remark
φ1:φ
1A1 to φ1A4, φ1L
φ2:φ
2A1 to φ2A4, φ2L
φ
TGL–0.30+0.5V
φ
R1B, 2 × fφR2B–216MHz
4
ELECTRICAL CHARACTERISTICS
µ
PD3725A
TA = +25 °C, VOD = 12 V, føR1B, f
φ
R2B = 1 MHz, data rate = 2 MHz, storage time = 10 ms,
light source: 3200 K halogen lamp +C-500S (infrared cut filter, t = 1 mm), input signal clock = 5 Vp-p
ParameterSymbolConditionsMIN.TYP.MAX.Unit
Saturation voltageVsat1.01.3–V
SER0.3lx•s
Saturation exposureSEG0.3lx•s
SEB0.6lx•s
Photo response non-uniformityPRNUVOUT = 500 mV±6±15%
Average dark signalADSLight shielding0.15mV
Dark signal non-uniformityDSNULight shielding–50.5+5mV
Power consumptionPW300500mW
Output impedanceZ O0.51kΩ
RR2.713.875.03V/lx•s
ResponseRG2.663.804.91V/lx•s
RB1.452.072.70V/lx•s
Image lagILVOUT = 500 mV25%
Offset level
Output fall delay time
Note 1
Note 2
VOS468V
td334047ns
Total transfer efficiencyTTEf
Register imbalanceRIVOUT = 500 mV0.04.0%
Red response peak630nm
Green response peak540nm
Blue response peak460nm
Dynamic rangeDRVsat/DSNU2600times
Reset feed through noiseRFSNLight shielding300500mV
φ
R1B, fφR2B = 8 MHz, data rate = 16 MHz93.598%
Notes 1. Refer to TIMING CHART 3, 5.
2. Each fall delay time of φ1L and φ2L (t11, t27 and t1, t37) is the TYP. value (refer to TIMING CHART 3, 5).
5
INPUT PIN CAPACITANCE
ParameterSymbolPin namePin No.MIN.TYP.MAX.Unit
φ
TG116
µ
PD3725A
Transfer gate pin capacitanceC
Reset clock pin capacitanceC
Last stage shift register clock pin capacitanceC
Shift register clock pin capacitance AC
Shift register clock pin capacitance BC
φ
TG
φ
R5080pF
φ
L100150pF
φ
A250380pF
φ
B500750pF
φ
TG213300450pF
φ
TG310
φ
R1B20
φ
R2B5
φ
1L19
φ
2L6
φ
1A118
φ
1A48
φ
2A117
φ
2A49
φ
1A215
φ
1A311
φ
2A214
φ
2A312
6
TIMING CHART 1
φ
φ
TG1, TG3
φ
φ
φ
φ
1A1 to 1A4, 1L
φ
2A1 to 2A4, 2L
φ
R1B
φ
R2B
V
OUT
1, 3, 5
OUT
2, 4, 6
V
TG2
φ
φ
R, B
G
01231360616263646566
D0D2D4D8D26D122D126S1S3S5
D1D3D5D25D27D123D127S2S4S6
Vacant transfer (26 bits)Optical black (96 bits) Invalid photocell (6 bits)
Valid photocell (5000 bits)
Caution Pins 18 (
And also pins 17 (
φ
1A1) and 15 (
φ
φ
1A2), 11 (
2A1) and 14 (
φ
1A3) and 8 (φ1A4) are each connected inside of the device, so do not input different timings to them.
φ
2A2), 12 (
φ
2A3) and 9 (
φ
2A4) are each connected inside of the device, so do not input different timings to them
µ
PD3725A
(refer to BLOCK DIAGRAM).
7
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