NEC UPA1802GR-9JG Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

PA1802

µµµµ

DESCRIPTION

The µPA1802 is a switching device which can be
driven directly by a 2.5-V power source.
The µPA1802 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.

FEATURES

Can be driven by a 2.5-V power source

•

Low on-state resistance

•

DS(on)1

R

= 23 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)

DS(on)2

R

= 25 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A)

DS(on)3

R

= 32 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)

ORDERING INFORMATION

PART NUMBER PACKAGE

PA1802GR-9JG Power TSSOP8

µ

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation

Note1

Note2

Channel Temperature T
Storage Temperature T

DSS

GSS

D(DC)

D(pulse)

I

P

ch

stg

T

85

14

3.15 ±0.15

3.0 ±0.1

0.65

0.27

20 V

±12 V

±7.0 A

±28 A

2.0 W

150 °C

–55 to +150 °C

PACKAGE DRAWING (Unit : mm)

+0.03
–0.08

1, 5, 8 :Drain
2, 3, 6, 7:Source
4 :Gate

0.8 MAX.

0.10 M

±0.055

0.145

1.2 MAX.

1.0±0.05

3°

0.1±0.05

6.4 ±0.2

4.4 ±0.1

+5°
–3°

EQUIVALENT CIRCUIT

Drain

Gate

Gate
Protection
Diode

Source

Body
Diode

0.25

0.5

+0.15

0.6

–0.1

1.0 ±0.2

0.1

Notes 1.

Remark

PW ≤ 10 µs, Duty Cycle ≤ 1 %

2.

Mounted on ceramic substrate of 5000 mm2 x 1.1 mm

The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D12966EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan

The mark

••••

shows major revised points.

©

1997, 2000

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

µµµµ

PA1802

Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V

••••

Forward Transfer Admittance | yfs |VDS = 10 V, ID = 3.5 A516S

••••

Drain to Source On-state Resi stance R

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V

DSS

GSS

GS(off)VDS

DS(on)1VGS

DS(on)2VGS

R

DS(on)3VGS

R

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

VDS = 20 V, VGS = 0 V10
VGS = ±12 V, VDS = 0 V±10

A

µ

A

µ

= 10 V, ID = 1 mA 0.5 0.8 1.5 V

= 4.5 V, ID = 3.5 A1623m
= 4.0V, ID = 3.5 A1725m
= 2.5 V, ID = 3.5 A2132m

Ω
Ω
Ω

VDS = 10 V 970 pF
VGS = 0 V 510 pF
f = 1 MHz 230 pF
VDD = 10 V60ns
ID = 3.5 A 210 ns

GS(on)

V

= 4.0 V 590 ns

RG = 10

Ω

820 ns
VDS = 16 V13nC
ID = 7.0 A3nC
VGS = 4.0 V 5 nC

= 7.0 A, VGS = 0 V0.74V

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

L

R

PG.

GS

V

0

τ = 1 s
Duty Cycle ≤ 1 %

RG

VDD

τ

µ

V

GS

Wave Form

ID

Wave Form

VGS

ID

0

0

10 %

10 %

td(on)

90 %

ton

VGS(on)

tr

ID

td(off)

toff

90 %

90 %

10 %

t

f

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = 2 mA

PG.

50 Ω

RL

VDD

2

Data Sheet D12966EJ1V0DS00

FORWARD BIAS SAFE OPERATING AREA

10 100

I

D

- Drain Current - A

1

V

DS

- Drain to Source Voltage - V

100

10

1

0.1

0.01

0.1

PW

=

1 ms

100 ms

10

ms

R

DS(on)

Limited

(@V

GS

=

4.5

V)

ID(pulse)

ID(DC)

DC

TA = 25˚C
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm

2

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

I

D

- Drain Current - A

0

0.4

0.6

0.8

10

0.2

20

25

30

15

5

Pulsed

V

GS

= 4.5 V

4.0 V

2.5 V

FORWARD TRANSFER CHARACTERISTICS

V

GS

- Gate to Source Voltage - V

I

D

- Drain Current - A

10

1

0.1

0.01

0.001

0.0001

0.00001
0 0.5 21 1.5

VDS = 10 V

TA = 125˚C

75˚C

25˚C

−25˚C

0.1

1100.010.001

VDS = 10 V

ID - Drain Current - A

| y

fs

| - Forward Transfer Admittance - S

0.1

1

0.01

10

25

˚C

75

˚C

125

˚C

TA = −25

˚C

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

••••

TYPICAL CHARACTERISTICS (TA = 25 °C)

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

µµµµ

PA1802

0

30

60

90

TA - Ambient Temperature -

GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

1.5
V

DS

= 10 V

D

= 1 mA

I

120

˚C

150

1

0.5

- Gate to Source Cut-off Voltage - V

GS(off)

0

V

−50

50 1000

ch

- Channel Temperature - ˚C

T

150

Data Sheet D12966EJ1V0DS00

3