Motorola BD166 Datasheet
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
complementary circuits.
• DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
• BD166 is complementary with BD165
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
45
Vdc
Collector–Base Voltage
V
CBO
45
Vdc
Emitter–Base Voltage
V
EBO
5.0
Vdc
Collector Current
I
C
1.5
Adc
Base Current
I
B
0.5
Adc
Total Device Dissipation @ TA = 25_C
Derate above 25_C
P
D
1.25
10
Watts
mW/_C
Total Device Dissipation @ TC = 25_C
Derate above 25_C
P
D
20
160
Watts
mW/_C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
JC
6.25
_
C/W
Thermal Resistance, Junction to Ambient
θ
JA
100
_
C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
V
(BR)CEO
45
—
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector Cutoff Current
(VCB = 45 Vdc, IE = 0)
I
CBO
—
0.1
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
I
EBO
—
1.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
mAdc
DC Current Gain
(IC = 0. 15 A, VCE = 2.0 V)
(IC = 0.5 A, VCE = 2.0 V)
h
FE
40
15
—
—
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Collector–Emitter Saturation Voltage*
(IC = 0.5 Adc, IB = 0.05 Adc)
V
CE(sat)
—
0.5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Base–Emitter On Voltage*
(IC = 0.5 Adc, VCE = 2.0 Vdc)
V
BE(on)
—
0.95
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 2.0 Vdc,
f = 1.0 MHz)
f
T
6.0
—
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
MHz
*Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD166/D
Motorola, Inc. 1995
1.5 AMPERE
POWER TRANSISTOR
PNP SILICON
45 VOLTS
20 WATTS
CASE 77–08
TO–225AA TYPE
REV 7
BD166
2
Motorola Bipolar Power Transistor Device Data
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Figure 1. PD – TC Derating Curve
TC, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
10
Figure 2. Safe Operating Area (see Note 1)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
3.0
2.0
1.0
0.5
0.1
5.0 7.0 10 20 30 10050
0.3
0.2
I
C
, COLLECTOR CURRENT (AMP)
PULSE CURVES APPLY BELOW
RATED V
CEO
TJ = 150°C
dc
5.0 ms
100 µs
70
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25
°
C
1.0 ms
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
1.2
0
1
1
0.8
0.6
0.4
0.2
5 10 50 100 500 1000
IC = 0.1 A 0.25 A 1 A0.5 A
10
0.01
Figure 4. Current Gain
IC, COLLECTOR CURRENT (A)
0.1
0.05 0.1 0.5 1
1
TJ = + 150°C
+ 25°C – 25°C
VCE = 2 V
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 5. “On” Voltage
IC, COLLECTOR CURRENT (mA)
VOLTAGE (VOLTS)
1
0.5
0.1
0.05
0.01
10 50 100 500 1000
VBE at VCE = 2 VV
BE(sat)
at IC/IB = 10
TJ = 25°C
V
CE(sat)
at IC/IB = 10
Note 1:
There are two limitations on the power handling ability of a
transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 1 0% provided T
J(pk)
v
150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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