Mitsubishi Electric Corporation Semiconductor Group FY8ACH-02A Datasheet
MITSUBISHI Nch POWER MOSFET
FY8ACH-02A
HIGH-SPEED SWITCHING USE
FY8ACH-02A
● 2.5V DRIVE
DSS ..................................................................................20V
● V
● r
DS (ON) (MAX) ............................................................. 22mΩ
D........................................................................................... 8A
● I
OUTLINE DRAWING Dimensions in mm
➄➇
6.0
4.4
➃➀
➄➅➆➇
➃
1.8 MAX.
➀➂
➁➃
SOURCE
GATE
DRAIN
➄➅
➂
5.0
0.4
1.27
➆➇
➁
➀
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 10µH
Typical value
20
±10
8
56
8
1.7
6.8
1.8
–55 ~ +150
–55 ~ +150
0.07
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 4V
ID = 4A, VGS = 2.5V
ID = 8A, VGS = 4V
ID = 8A, VDS = 10V
VDS = 10V , VGS = 0V, f = 1MHz
VDD = 10V, ID = 4A, VGS = 4V, R GEN = RGS = 50Ω
IS = 1.7A, VGS = 0V
Channel to ambient
IS = 1.7A, dis/dt = –50A/µs
MITSUBISHI Nch POWER MOSFET
FY8ACH-02A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
20
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.9
17
23
0.140
22
1700
510
360
26
85
190
180
0.75
—
100
—
±0.1
0.1
1.3
22
36
0.176
—
—
—
—
—
—
—
—
1.1
69.4
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
50
VGS = 5V
40
30
20
10
DRAIN CURRENT ID (A)
0
0 0.4 0.8 1.2 1.6 2.0
3V
4V
(TYPICAL)
C (°C)
TC = 25°C
Pulse Test
2.5V
1.5V
PD = 1.8W
2V
MAXIMUM SAFE OPERATING AREA
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
DRAIN CURRENT ID (A)
2
TC = 25°C
–1
Single Pulse
10
7
2
0
10
357 2 10
357 2 10
1
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
20
16
VGS = 5V
12
4V
3V
2.5V
8
4
DRAIN CURRENT ID (A)
0
0 0.2 0.4 0.6 0.8 1.0
tw = 10µs
100µs
1ms
10ms
100ms
DC
357
DS (V)
TC = 25°C
Pulse Test
PD = 1.8W
1.5V
2V
2
2
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
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