HP INA-03100 Datasheet
Low Noise, Cascadable Silicon
Bipolar MMIC Amplifier
Technical Data
INA-03100
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
2.5 dB Typical at 1.5 GHz
• High Gain:
26.0 dB Typical at 2.8 GHz
• 3 dB Bandwidth:
DC to 2.8 GHz
• Unconditionally Stable
(k>1)
• Low Power Consumption
require high gain and low noise IF
or RF amplification with minimum
power consumption.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz f
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielectric and scratch protection to
achieve excellent performance,
Description
uniformity and reliability.
The INA-03100 is a low-noise
silicon bipolar Monolithic Microwave Integrated Circuit (MMIC)
feedback amplifier chip. It is
designed for narrow or wide
bandwidth commercial, industrial
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.
and military applications that
Typical Biasing Configuration
RFC (Optional)
[1]
V
[1]
C
M
AK 1987
(1)
RF
IN
(4)
RF
OUT
GND
1
(3)
, ISOSAT™-I silicon
MAX
Chip Outline
(2)
GND
2
NA03
Note:
1. See Application Note, “A005: Transistor
Chip Use” for additional information.
CC
R
bias
C
block
RF IN RF OUT
4
3
1
2
V
= 5.5 V
d
(Nominal)
C
block
5965-9676E
6-102
INA-03100 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 50 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
[2,3]
200 mW
[1]
Thermal Resistance
[2]
:
θjc = 70°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
3. Derate at 14.3 mW/° C for T
186°C.
(TMS)
= 25°C.
MS
>
INA-03100 Electrical Specifications
Symbol Parameters and Test Conditions
G
P
∆G
f
3 dB
ISO Reverse Isolation (|S
VSWR
Power Gain (|S21|2) f = 1.5 GHz dB 26.0
Gain Flatness f = 0.01 to 2.0 GHz dB ±0.5
P
3 dB Bandwidth GHz 2.8
|2) f = 0.01 to 2.0 GHz dB 37
12
Input VSWR f = 0.01 to 2.0 GHz 2.0
Output VSWR f = 0.01 to 2.0 GHz 3.0
[1,3]
, T
= 25° C
A
[2]
: Id = 12 mA, Z
= 50 Ω Units Min. Typ. Max.
O
5
5
NF 50 Ω Noise Figure f = 1.5 GHz dB 2.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.5 GHz dBm 1.0
Third Order Intercept Point f = 1.5 GHz dBm 10
Group Delay f = 1.5 GHz psec 200
Device Voltage f = 1.5 GHz V 3.5 4.5 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C+5
Notes:
1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is
on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-03100 mounted in a 70 mil stripline package.
INA-03100 Typical Scattering Parameters
Freq.
S
11
S
21
[1]
(Z
= 50 Ω, TA = 25° C, I
O
S
12
= 12 mA)
d
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.05 0.35 176 26.6 21.4 –4 –36.0 .016 8 .56 –1 1.25
0.10 0.35 172 26.6 21.3 –8 –36.5 .015 –4 .56 –3 1.30
0.20 0.33 165 26.4 21.0 –15 –36.4 .015 –5 .56 –4 1.30
0.40 0.31 150 26.1 20.1 –29 –36.0 .016 –13 .54 –7 1.33
0.60 0.27 137 25.6 19.0 –42 –37.6 .013 –14 .54 –8 1.58
0.80 0.23 125 25.0 17.8 –53 –36.1 .016 –13 .53 –9 1.49
1.00 0.19 113 24.5 16.7 –63 –35.1 .018 –16 .53 –10 1.43
1.20 0.16 99 24.0 15.9 –72 –36.9 .014 –21 .54 –12 1.72
1.40 0.13 76 23.8 15.4 –81 –36.4 .015 –12 .55 –15 1.65
1.60 0.12 51 23.6 15.2 –88 –35.6 .017 –11 .56 –17 1.54
1.80 0.13 21 23.6 15.5 –97 –34.1 .020 –5 .58 –20 1.24
2.00 0.18 –5 23.8 15.5 –106 –34.3 .019 –13 .60 –25 1.18
2.50 0.40 –52 24.7 17.2 –132 –30.2 .031 –9 .67 –38 0.53
3.00 0.81 –86 25.6 19.1 –167 –27.0 .045 –12 .70 –64 0.03
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Avantek Microwave Semiconductors databook.
6-103
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