HP AT-64020 Datasheet
Up to 4 GHz Linear Power
Silicon␣ Bipolar Transistor
Technical Data
AT-64020
Features
• High Output Power:
27.5 dBm Typical P
26.5 dBm Typical P
• High Gain at 1 dB
Compression:
10.0 dB Typical
6.5 dB Typical
• 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia
Package
1 dB
1 dB
G
1 dB
G
1 dB
at 2.0␣ GHz
at 4.0␣ GHz
at 2.0␣ GHz
at 4.0␣ GHz
200 mil BeO PackageDescription
The AT-64020 is a high performance NPN silicon bipolar
transistor housed in a hermetic
BeO disk package for good
thermal characteristics. This
device is designed for use in
medium power, wide band
amplifier and oscillator applications operating over VHF, UHF
and microwave frequencies.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
The use of ion-implanted ballast
resistors ensures uniform current
distribution through the multiple
emitter fingers.
4-179
5965-8915E
AT-64020 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Emitter-Base Voltage V 2
Collector-Base Voltage V 40
Collector-Emitter Voltage V 20
Collector Current mA 200
Power Dissipation
[2,3]
W3
Junction Temperature °C 200
Storage Temperature °C -65 to 200
[1]
Thermal Resistance
[2,4]
θjc = 40°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
3. Derate at 25 mW/° C for T
4. The small spot size of this tech-
= 25° C.
CASE
> 80°C.
C
nique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
:
jc
Electrical Specifications, T
Symbol Parameters and Test Conditions
|S
|2Insertion Power Gain; VCE = 16 V, IC = 110 mA f = 2.0 GHz dB 7.0
21E
= 25° C
A
[1]
Units Min. Typ. Max.
f = 4.0 GHz 2.0
P
1 dB
Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 26.5 27.5
VCE = 16 V, IC = 110 mA f= 4.0 GHz 26.5
G
1 dB
1 dB Compressed Gain; VCE = 16 V, IC = 110 mA f = 2.0 GHz dB 8.5 10.0
f = 4.0 GHz 6.5
η
T
Total Efficiency at 1 dB Compression: f = 4.0 GHz % 35.0
VCE = 16 V, IC = 110 mA
h
FE
I
CBO
I
EBO
Note:
1.
η
T
Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA — 20 50 200
Collector Cutoff Current; V
Emitter Cutoff Current; V
=
(RF Output Power)/(RF Input Power + VCEIC).
= 16 V µA 100
CB
= 1 V µA 5.0
EB
4-180
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