HP AT-42086-TR1, AT-42086-BLK Datasheet
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42086
Features
• High Output Power:
20.5 dBm Typical P
at 2.0␣ GHz
1 dB
• High Gain at 1 dB
Compression:
13.5 dB Typical
G
1 dB
at 2.0␣ GHz
• Low Noise Figure:
1.9 dB Typical
NFO at 2.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f
T
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
[1]
Description
Hewlett-Packard’s AT-42086 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42086 is housed in a low cost
surface mount .085" diameter
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconductor
Devices.”
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. Applications
include use in wireless systems as
an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise
match near 50␣ Ω up to 1 GHz,
makes this device easy to use as a
low noise amplifier.
The AT-42086 bipolar transistor is
fabricated using Hewlett- Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
86 Plastic Package
Pin Connections
EMITTER
4
BASE
1
420
2
EMITTER
COLLECTOR
3
5965-8914E
4-174
AT-42086 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
V
V
T
EBO
CBO
CEO
I
C
P
T
STG
T
j
Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 80
Power Dissipation
[2,3]
m W 500
Junction Temperature °C 150
Storage Temperature °C -65 to 150
[1]
Part Number Ordering Information
Part Number Increment Comments
AT-42086-BLK 100 Bulk
AT-42086-TR1 1000 Reel
Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Thermal Resistance
[2,4]
θjc = 140°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
3. Derate at 7.1 mW/°C for T
4. See MEASUREMENTS section
= 25° C.
CASE
> 80° C.
C
“Thermal Resistance” for more
information.
:
Electrical Specifications, T
= 25° C
A
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S
|2Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 1.0 GHz dB 15.0 16.5
21E
f = 2.0 GHz 10.5
f = 4.0 GHz 4.5
P
1 dB
Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 20.5
VCE = 8 V, IC = 35 mA f= 4.0 GHz 20.0
G
1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 13.5
f = 4.0 GHz 9.0
NF
Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 1.9
O
f = 4.0 GHz 3.5
G
A
Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 13.0
f = 4.0 GHz 9.0
f
T
h
FE
I
CBO
I
EBO
C
CB
Note:
1. For this test, the emitter is grounded.
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150 270
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
= 8 V µA 0.2
CB
= 1 V µA 2.0
EB
[1]
: VCB = 8 V , f = 1 MH z pF 0.32
4-175
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