HP AT-42085 Datasheet
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42085
Features
• High Output Power:
20.5 dBm Typical P
• High Gain at 1 dB
Compression:
14.0 dB Typical
• Low Noise Figure:
2.0 dB Typical
• High Gain-Bandwidth
Product: 8.0 GHz Typical f
• Low Cost Plastic Package
at 2.0␣ GHz
1 dB
G
at 2.0␣ GHz
1 dB
NFO at 2.0␣ GHz
T
Description
Hewlett-Packard’s AT-42085 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42085 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 20 emitter finger interdigitated geometry yields a medium
sized transistor with impedances
that are easy to match for low
noise and medium power applications. Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50␣ Ω up to 1 GHz, makes this
device easy to use as a low noise
amplifier.
The AT-42085 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
Self-Aligned-Transistor
T
85 Plastic Package
4-169
5965-8913E
AT-42085 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
V
V
T
EBO
CBO
CEO
I
C
P
T
STG
T
j
Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 80
Power Dissipation
[2,3]
m W 500
Junction Temperature °C 150
Storage Temperature °C -65 to 150
[1]
Thermal Resistance
[2,4]
θjc = 130°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
3. Derate at 7.7 mW/°C for T
4. See MEASUREMENTS section
= 25° C.
CASE
> 85°C.
C
“Thermal Resistance” for more
information.
:
Electrical Specifications, T
= 25° C
A
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S
|2Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 1.0 GHz dB 15.5 17.0
21E
f = 2.0 GHz 11.0
f = 4.0 GHz 5.0
P
1 dB
Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 20.5
VCE = 8 V, IC = 35 mA f= 4.0 GHz 20.0
G
1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 14.0
f = 4.0 GHz 9.5
NF
Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 2.0
O
f = 4.0 GHz 3.5
G
A
Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 13.5
f = 4.0 GHz 9.5
f
T
h
FE
I
CBO
I
EBO
C
CB
Note:
1. For this test, the emitter is grounded.
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150 270
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
= 8 V µA 0.2
CB
= 1 V µA 2.0
EB
[1]
: VCB = 8 V , f = 1 MH z pF 0.32
4-170
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