HP AT-42070 Datasheet
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42070
Features
• High Output Power:
21.0 dBm Typical P
20.5 dBm Typical P
• High Gain at 1 dB
Compression:
15.0 dB Typical
10.0 dB Typical
• Low Noise Figure:
1.9 dB Typical
• High Gain-Bandwidth
Product: 8.0 GHz Typical f
• Hermetic Gold-ceramic
Microstrip Package
at 2.0␣ GHz
1 dB
at 4.0␣ GHz
1 dB
G
at 2.0␣ GHz
1 dB
G
at 4.0␣ GHz
1 dB
NFO at 2.0␣ GHz
T
Description
Hewlett-Packard’s AT-42070 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42070 is housed in a hermetic,
high reliability gold-ceramic 70 mil
microstrip package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near
50␣ Ω up to 1 GHz, makes this
device easy to use as a low noise
amplifier.
The AT-42070 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
Self-Aligned-Transistor
T
70 mil Package
5965-8912E
4-164
AT-42070 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Electrical Specifications, T
Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 80
Power Dissipation
[2,3]
m W 600
Junction Temperature °C 200
Storage Temperature °C -65 to 200
= 25° C
A
Symbol Parameters and Test Conditions
|S
|2Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 10.5 11.5
21E
[1]
[1]
f = 4.0 GHz 5.5
P
1 dB
Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 21.0
VCE = 8 V, IC = 35 mA f= 4.0 GHz 20.5
G
1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 15.0
f = 4.0 GHz 10.0
NF
Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 1.9
O
f = 4.0 GHz 3.0
G
A
Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 14.0
f = 4.0 GHz 10.5
f
h
I
I
C
T
FE
CBO
EBO
CB
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150 270
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
= 8 V µA 0.2
CB
= 1 V µA 2.0
EB
[1]
: VCB = 8 V , f = 1 MH z pF 0.28
Thermal Resistance
θjc = 150°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25° C.
3. Derate at 6.7 mW/°C for T
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Units Min. Typ. Max.
[2,4]
:
> 110°C.
C
jc
Note:
1. For this test, the emitter is grounded.
4-165
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