HP AT-42010 Datasheet
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42010
Features
• High Output Power:
12.0 dBm Typical P
20.5 dBm Typical P
• High Gain at
1␣ dB␣ Compression:
14.0 dB Typical
9.5 dB Typical
• Low Noise Figure:
1.9 dB Typical
• High Gain-Bandwidth
Product: 8.0 GHz Typical f
• Hermetic Gold-ceramic
Microstrip Package
at 2.0␣ GHz
1 dB
at 4.0␣ GHz
1 dB
G
at 2.0␣ GHz
1 dB
G
at 4.0␣ GHz
1 dB
NFO at 2.0␣ GHz
T
Description
Hewlett-Packard’s AT-42010 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42010 is housed in a hermetic,
high reliability 100 mil ceramic
package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different
functions. The 20 emitter finger
interdigitated geometry yields a
medium sized transistor with
impedances that are easy to match
for low noise and medium power
applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near
50␣ Ω up to 1 GHz , makes this
device easy to use as a low noise
amplifier.
The AT-42010 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
Self-Aligned-Transistor
T
100 mil Package
5965-8910E
4-154
AT-42010 Absolute Maximum Ratings
Symbol Parameter Units Maximum
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Electrical Specifications, T
Symbol Parameters and Test Conditions
|S
|2Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 10.5 11.5
21E
Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 80
Power Dissipation
[2,3]
Junction Temperature °C 200
Storage Temperature °C -65 to 200
= 25° C
A
[1]
Absolute
m W 600
[1]
Thermal Resistance
θjc = 150°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
3. Derate at 6.7 mW/°C for
4. The small spot size of this tech-
= 25° C.
CASE
T
> 110°C.
C
nique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Units Min. Typ. Max.
f = 4.0 GHz 5.5
P
1 dB
Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 21.0
VCE = 8 V, IC = 35 mA f= 4.0 GHz 20.5
G
1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 14.0
f = 4.0 GHz 9.5
NF
Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 1.9
O
f = 4.0 GHz 3.0
G
A
Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 13.5
f = 4.0 GHz 10.0
f
h
I
I
C
T
FE
CBO
EBO
CB
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150 270
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
= 8 V µA 0.2
CB
= 1 V µA 2.0
EB
[1]
: VCB = 8 V , f = 1 MH z pF 0.28
[2,4]
:
jc
Notes:
1. For this test, the emitter is grounded.
4-155
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