HP AT-41586-TR1, AT-41586-BLK Datasheet

Low Cost General Purpose
Transistors

Technical Data

AT-41586

Features

• Low Noise Figure

1.4 dB Typical at 1 GHz

1.7 dB Typical at 2 GHz

• High Associated Gain

17.0 dB Typical at 1 GHz

12.5 dB Typical at 2 GHz

• Low Cost Surface Mount
Package

• Tape and Reel Option
Available

24

21

18

15

12

A

G (dB)

9

6

3
0

0.5

Figure 1. AT-41586 Noise Figure and
Associated Gain vs. Frequency at
VCE = 8 V, IC= 10 mA.

G

A

NF

O

FREQUENCY (GHz)

4.01.0

3.02.0

Description

Hewlett-Packard’s AT-41586 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41586 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match

near 50 Ω in the 1 to 2 GHz

frequency range, makes this

4

device easy to use as a low noise
amplifier.

O

2

NF (dB)

0

The AT-41586 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.

86 Plastic Package

Pin Connections

EMITTER

4

BASE

1

415

2

EMITTER

Excellent device uniformity,
performance and reliability are
produced by the use of ion­implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.

COLLECTOR

3

5965-8908E

4-144

AT-41586 Absolute Maximum Ratings

[1]

Absolute

Symbol Parameter Units Maximum

V

EBO

V

CBO

V

CEO

I

C

P

T

T

j

T

STG

Notes:

1. Operation of this device above any one of these parameters may cause permanent damage.

2. T

= 25°C.

CASE

3. See MEASUREMENTS section, “Thermal Resistance,” for more information.

Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 60
Power Dissipation

[2]

mW 500

Junction Temperature °C 150
Storage Temperature °C -65 to 150

[1]

Thermal Resistance:

θ

=165°C/W

jc

[3]

Electrical Specifications, T

= 25° C, V

A

= 8 V

CE

Symbol Parameters and Test Conditions Unit Min. Typ. Max.

NF

Optimum Noise Figure: IC = 10 mA f = 1.0 GHz dB 1.4

o

f = 2.0 GHz 1.7
f = 4.0 GHz 3.0

G

Gain @ NF0: IC = 10 mA f = 1.0 GHz dB 17.0

A

f = 2.0 GHz 12.5
f = 4.0 GHz 8.0

2

|S

|

21E

Insertion Power Gain: IC = 25 mA f = 1.0 GHz dB 17.0

f = 2.0 GHz 11.0

P

1dB

G

1dB

f

T

h

FE

I

CBO

I

EBO

Note:

1. For more information on outlines 86, refer to “Tape and Reel Packaging for Surface Mount Devices.”

16

14

A

G (dB)

12

10

030

Figure 2. AT-41586 Optimum Noise
Figure and Associated Gain vs. Collec­tor Current at VCE = 8 V, f = 2.0 GHz.

Power Output @ 1 dB Gain Compression: IC = 25 mA f = 2.0 GHz dBm 18.0
1 dB Compressed Gain: IC = 25 mA f = 2.0 GHz dB 13.0
Gain Bandwidth Product: IC = 25 mA GHz 8.0
Forward Current Transfer Ratio: IC = 10 mA 30 150 270
Collector Cutoff Current: V
Emitter Cutoff Current: V

G

A

NF

O

10 20

I (mA)

C

4

2

0

= 8 V µA 0.2

CB

= 1 V µA 1.0

EB

20
18

P

1dB

16
14

G

1dB

12
10

GAIN (dB)

8
6
4

O

2

NF (dB)

0

10 20

COLLECTOR CURRENT

Figure 3. AT-41586 P
Collector Current at VCE = 8 V,

1dB

f␣ =␣ 2.0␣ GHz.

30

and G

1dB

40

vs.

20

1.0 GHz

15

I (mA)

C

2.0 GHz

4.0 GHz

2

10

21E

|S | (dB)

5

0

02540

510

Figure 4. AT-41586 Insertion Power
Gain vs. Collector Current and

Frequency at 25°C, V

CE

= 8 V.

30

4-145