HP AT-41533-TR1, AT-41533-BLK, AT-41511-TR1, AT-41511-BLK Datasheet

General Purpose, Low Noise
NPN␣ Silicon Bipolar Transistor

Technical Data

AT-41511
AT-41533

Features

• General Purpose NPN
Bipolar Transistor

• 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB G
AT-41533: 1 dB NF, 14.5 dB G

• Characterized for 3, 5, and
8 Volt Use

• SOT-23 and SOT-143 SMT
Plastic Packages

• Tape-and-Reel Packaging
Option Available

[1]

Outline Drawing

EMITTER COLLECTOR

415

BASE EMITTER

SOT 143 (AT-41511)

COLLECTOR

415

Description

Hewlett-Packard’s AT-41511 and
AT-41533 are general purpose
NPN bipolar transistors that offer
excellent high frequency

A

performance at an economical

A

price. The AT-41533 uses the
3␣ lead SOT-23, while the AT-415 11
places the same die in the lower
parasitic 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.

The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate
power.

Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good

performers at 2.7 V. Applications
include use in wireless systems as
an LNA, gain stage, buffer,
oscillator, or active mixer.

An optimum noise match near
50␣ ohms at 900 MHz makes these
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.

The AT-415 series bipolar
transistors are fabricated using
Hewlett-Packard’s 10 GHz fT Self­Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by
the use of ion-implantation, self­alignment techniques, and gold
metalization in the fabrication of
these devices.

BASE EMITTER

SOT 23 (AT-41533)

1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices.”

5965-8929E

4-134

AT-41511, AT-41533 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

V

V

T

EBO

CBO

CEO

I

C

P

T

T

STG

j

Emitter-Base Voltage V 1.5

Collector-Base Voltage V 20

Collector-Emitter Voltage V 12

Collector Current mA 50

Power Dissipation

[2,3]

m W 225

Junction Temperature ° C 150
Storage Temperature °C -65 to 150

[1]

Thermal Resistance:

θ

=550°C/W

jc

Notes:

1. Operation of this device above any one
of these parameters may cause
permanent damage.

2. T

Mounting Surface

3. Derate at 1.82 mW/°C for TC > 26°C.

= 25°C.

[2]

Electrical Specifications, T

= 25° C

A

AT-41511 AT-41533

Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max

h

FE

Forward Current Transfer Ratio VCE = 5 V - 30 150 270 30 150 270

IC = 5 mA

I

CBO

I

EBO

Characterization Information, T

Collector Cutoff Current V

Emitter Cutoff Current V

= 25° C

A

= 3 V µA 0.2 0.2

CB

= 1 V µA 1.0 1.0

EB

AT-41511 AT-41533

Symbol Parameters and Test Conditions Units Min Typ Min Typ

NF Noise Figure f = 0.9 GHz dB 1.0 1.0

VCE = 5 V, IC = 5 mA f = 2.4 GHz 1.7 1.6

G

Associated Gain f = 0.9 GHz dB 15.5 14.5

A

VCE = 5 V, IC = 5 mA f = 2.4 GHz 11 9

P

1dB

Power at 1 dB Gain Compression (opt tuning) f = 0.9 GHz dBm 14.5 14.5
VCE = 5 V, IC = 25 mA

G

1dB

Gain at 1 dB Gain Compression (opt tuning) f = 0.9 GHz dB 17.5 14.5
VCE = 5 V, IC = 25 mA

IP

Output Third Order Intercept Point, f = 0.9 GHz dBm 25 25

3

VCE = 5 V, IC =25 mA (opt tuning)

2

|S

|

21E

Gain in 50 Ω system; V

= 5 V, IC = 5 mA f = 0.9 GHz dB 13.5 15.5 10.8 12.8

CE

f = 2.4 GHz 7.9 5.2

Ordering Information

Part Number Increment Comments

AT-41511-BLK 100 Bulk
AT-41511-TR1 3000 7 " Reel

AT-41533-BLK 100 Bulk
AT-41533-TR1 3000 7 " Reel

4-135

AT-41511, AT-41533 Typical Performance

NOISE FIGURE (dB)

0.1

3.0

0

FREQUENCY (GHz)

0.6 2.1 2.6

2.5

1.5

0.5

1.6

2.0

1.0

1.1

25 mA

10 mA
5 mA

G

a

(dB)

0.1

20

0

FREQUENCY (GHz)

0.6 2.1 2.6

15

10

5

1.6

1.1

PKG 11

PKG 33

10, 25 mA

5 mA

10, 25 mA

5 mA

3.0

2.5

2.0

1.5

1.0

NOISE FIGURE (dB)

0.5

0

0.6 2.1 2.6

0.1
FREQUENCY (GHz)

1.1

25 mA

10 mA

2, 5 mA

1.6

Figure 1. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 2.7 V.

20

10, 25 mA

5

5 mA
2 mA

10, 25 mA

5 mA

2 mA

PKG 11

15

10

PKG 11 (dB)

a

G

25

20

15

10

3.0

2.5

2.0

1.5

1.0

NOISE FIGURE (dB)

0.5

0

0.1

1.1

0.6 2.1 2.6
FREQUENCY (GHz)

1.6

Figure 2. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 5 V.

20

PKG 11

15

PKG 33

10

(dB)

a

G

PKG 33 (dB)

a

G

5

25 mA

2 mA

10 mA

5 mA

10, 25 mA
5 mA
10, 25 mA
5 mA

Figure 3. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 8 V.

0

0.6 2.1 2.6

0.1
FREQUENCY (GHz)

PKG 33

1.61.1

Figure 4. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 2.7 V.

20

15

10

(dBm)

1 dB

P

5

0

1.1

1.6

0.6 2.1 2.6

0.1
FREQUENCY (GHz)

25 mA
10 mA

5 mA

Figure 7. AT-41511 and AT-41533
P

vs. Frequency and Bias at

1dB

VCE␣ =␣ 2.7␣ V, with Optimal Tuning.

5

0

0.6 2.1 2.6

0.1
FREQUENCY (GHz)

1.1

1.6

Figure 5. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 5 V.

20

15

10

(dBm)

1 dB

P

5

0

0.1

0.6 2.1 2.6
FREQUENCY (GHz)

1.1

1.6

Figure 8. AT-41511 and AT-41533
P

vs. Frequency and Bias at

1dB

VCE␣ =␣ 5␣ V, with Optimal Tuning.

25 mA

10 mA

5 mA

Figure 6. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 8 V.

20

25 mA

15

10 mA

10

(dBm)

1 dB

P

5

0

0.6 2.1 2.6

0.1
FREQUENCY (GHz)

1.1

1.6

Figure 9. AT-41511 and AT-41533
P

vs. Frequency and Bias at

1dB

VCE␣ =␣ 8␣ V, with Optimal Tuning.

5 mA

4-136