HP AT-41410 Datasheet
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
AT-41410
Features
• Low Noise Figure:
1.6 dB Typical at 2.0␣ GHz
3.0 dB Typical at 4.0␣ GHz
• High Associated Gain:
14.0 dB Typical at 2.0␣ GHz
10.0 dB Typical at 4.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f
• Hermetic, Gold-ceramic
Microstrip Package
T
Description
Hewlett-Packard’s AT-41410 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41410 is housed in a hermetic,
high reliability 100 mil ceramic
package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different
functions. The 14 emitter finger
interdigitated geometry yields an
intermediate sized transistor with
impedances that are easy to match
for low noise and moderate power
applications. This device is designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near 50␣ Ω
at 1 GHz , makes this device easy
to use as a low noise amplifier.
The AT-41410 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
100 mil Package
5965-8923E
4-104
AT-41410 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 5.9 mW/°C for T
4. The small spot size of this technique results in a higher, though more
= 25° C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 60
Power Dissipation
[2,3]
m W 500
Junction Temperature °C 200
Storage Temperature °C -65 to 200
> 115°C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 170°C/W
[2,4]
:
Electrical Specifications, T
= 25° C
A
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S
|2Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 12.0
21E
f = 4.0 GHz 6.5
P
1 dB
Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 19.0
VCE = 8 V, IC = 25 mA f= 4.0 GHz 18.5
G
1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 14.0
f = 4.0 GHz 9.5
NF
Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 1.3
O
f = 2.0 GHz 1.6 1.9
f = 4.0 GHz 3.0
G
A
Gain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 18.5
f = 2.0 GHz 13.0 14.0
f = 4.0 GHz 10.0
f
T
h
FE
I
CBO
I
EBO
C
CB
Notes:
1. For this test, the emitter is grounded.
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA GHz 8.0
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA — 30 150 270
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
= 8 V µA 0.2
CB
= 1 V µA 1.0
EB
[1]
: VCB = 8 V, f = 1 MHz pF 0.2
4-105
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