Datasheet HMC265 Datasheet (hittite)

查询HMC265供应商

5

MICROWAVE CORPORATION

Typical Applications

The HMC265 is ideal for:

• Microwave Point to Point Radios

• LMDS

• SATCOM

Functional Diagram

v01.0701

HMC265

GaAs MMIC SUB-HARMONICALLY

PUMPED DOWNCONVERTER, 20 - 32 GHz

Features

Integrated LO Amplifi er: -4 dBm Input
Sub-Harmonically Pumped (x2) LO
Integrated IF Amplifi er: 3 dB Gain
Small Size: 1.32mm x 1.32mm

General Description

The HMC265 chip is a sub-harmonically pumped
(x2) MMIC downconverter with integrated LO & IF
amplifi ers. The chip utilizes a GaAs PHEMT tech­nology that results in a small overall chip area of

1.74 mm2. The 2LO to RF isolation is excellent
eliminating the need for additional fi ltering. The
LO amplifi er is a single bias (+3V to +4V) two
stage design with only -4 dBm nominal drive
requirement. All data is with the chip in a 50
ohm test fi xture connected via 0.025 mm (1 mil)
diameter wire bonds of minimal length <0.31 mm
(<12 mils). This downconv erter IC is an excellent,
smaller, and more reliable replacement to hybrid
diode based downconverter MMIC assemblies.

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Electrical Specifi cations, T

Frequency Range, RF 20 - 32 27 - 30 GHz

Frequency Range, LO 10 - 16 13.5 - 15 GHz

Frequency Range, IF 0.7 - 3.0 0.7 - 3.0 GHz

Conversion Gain (RF to IF) -2 3 7 -2 2 5 dB

Noise Figure (SSB) 13 13 dB

2LO to RF Isolation 17 20 ~ 40 28 35 dB

2LO to IF Isolation 40 50 ~ 60 45 55 dB

IP3 (Input) 2 10 9 13 dBm

1 dB Compression (Input) -5 2 -2 2 dBm

Supply Current (Idd) 50 50 mA

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= +25° C, LO Drive = -4 dBm

A

IF = 1 GHz

Parameter

Min. Typ. Max. Min. Typ. Max.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

Vdd = +4V

IF = 1 GHz
Vdd = +4V

Units

MICROWAVE CORPORATION

v01.0701

HMC265

GaAs MMIC SUB-HARMONICALLY

PUMPED DOWNCONVERTER, 20 - 32 GHz

Conversion Gain vs. Temperature
@ LO = -4 dBm Vdd = +4V

10

5

0

-5

-10

CONVERSION GAIN (dB)

-15

-20
18 20 22 24 26 28 30 32 34

+85 C

RF FREQUENCY (GHz)

-55 C

+25 C

Conversion Gain vs. LO Drive
@ Vdd = +4V

10

-4dBm

5

0

-5

-10

CONVERSION GAIN (dB)

-15

-20
18 20 22 24 26 28 30 32 34

-6dBm

-2dBm

-8dBm

RF FREQUENCY (GHz)

0dBm

Conversion Gain vs. Temperature
@ LO = -4 dBm Vdd = +3V

10

5

0

-5

-10

CONVERSION GAIN (dB)

-15

-20

-55 C

18 20 22 24 26 28 30 32 34

RF FREQUENCY (GHz)

+25 C

+85 C

Conversion Gain vs. LO Drive
@ Vdd = +3V

10

5

-4dBm

0

-5

-10

CONVERSION GAIN (dB)

-15

-20
18 20 22 24 26 28 30 32 34

-6dBm

RF FREQUENCY (GHz)

5

-2dBm

MIXERS - CHIP

Isolation @ LO = -4 dBm, Vdd = +4V

10

0

-10

-20

-30

-40

ISOLATION (dB)

RF/IF

-50

-60

-70
18 20 22 24 26 28 30 32 34

LO/RF

2LO/RF

2LO/IF

RF FREQUENCY (GHz)

LO/IF

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

Isolation @ LO = -4 dBm, Vdd = +3V

10

0

-10

-20

-30

-40

ISOLATION (dB)

-50

-60

-70

LO/IF

18 20 22 24 26 28 30 32 34

RF FREQUENCY (GHz)

2LO/RF

2LO/IF

LO/RF

RF/IF

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MICROWAVE CORPORATION

IP3 vs. LO Drive @ Vdd = +4V

v01.0701

HMC265

GaAs MMIC SUB-HARMONICALLY

PUMPED DOWNCONVERTER, 20 - 32 GHz

IP3 vs. Temperature
@ LO = -4 dBm, Vdd = +4V

20
18
16
14
12
10

8
6
4

THIRD ORDER INTERCEPT (dBm)

2
0

5

18 20 22 24 26 28 30 32 34

LO & RF Return Loss
@ LO = -4 dBm, Vdd = +4V

0

-5

-10

RETURN LOSS (dB)

-15

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-6 dBm

RF FREQUENCY (GHz)

LO

-4 dBm

RF

-2 dBm

20
18
16
14
12
10

8
6
4

THIRD ORDER INTERCEPT (dBm)

2
0

18 20 22 24 26 28 30 32 34

+85C

-55C

+25C

RF FREQUENCY (GHz)

IF Return Loss
@ LO = -4 dBm, Vdd = +4V

0

-5

-10
IF

RETURN LOSS (dB)

-15

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-20
0 5 10 15 20 25 30 35 40

FREQUENCY (GHz)

P1dB vs. Temperature
@ LO = -4 dBm, Vdd = +4V

3
2
1
0

-1

P1dB (dBm)

-2

-3

-4

-5

+85 C

-55 C

+25 C

18 20 22 24 26 28 30 32 34

RF FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

-20
0123456

IF Bandwidth @ LO = -4 dBm

10

5

0

-5

-10

IF CONVERSION GAIN (dB)

-15

-20
0123456

Order Online at www.hittite.com

FREQUENCY (GHz)

Vdd = +4V

Vdd = +3V

IF FREQUENCY (GHz)

MICROWAVE CORPORATION

v01.0701

GaAs MMIC SUB-HARMONICALLY

PUMPED DOWNCONVERTER, 20 - 32 GHz

Absolute Maximum Ratings

RF / IF Input (Vdd = +4V) +13 dBm

LO Drive (Vdd = +4V) +13 dBm

Vdd +5.5 Vdc

Storage Temperature -65 to +150 °C

Operating Temperature -55 to +85 °C

Outline Drawing (See Handling Mounting Bonding Note)

HMC265

5

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM].

2. DIE THICKNESS IS .004”.

3. TYPICAL BOND PAD IS .004” SQUARE.

4. BOND PAD SPACING CENTER TO
CENTER IS .006”.

5. BACKSIDE METALLIZATION: GOLD.

6. BOND PAD METALLIZATION: GOLD.

7. BACKSIDE METAL IS GROUND.

8. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MIXERS - CHIP

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5

MICROWAVE CORPORATION

v01.0701

PUMPED DOWNCONVERTER, 20 - 32 GHz

MIC Assembly Techniques

HMC265

GaAs MMIC SUB-HARMONICALLY

Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If

0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).

MIXERS - CHIP

Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).

An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutectically or by conductive epoxy) placed no further than

0.762mm (30 mils) from the chip is recommended. The photo in fi gure 3 shows a
typical assembly for the HMC265 MMIC chip.

Figure 3: Typical HMC265 Assembly

5 - 62

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v01.0701

HMC265

GaAs MMIC SUB-HARMONICALLY

PUMPED DOWNCONVERTER, 20 - 32 GHz

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

Handling Precautions

Follow these precautions to avoid permanent damage.

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instr ument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize

inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scr ubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding

Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).

5

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MIXERS - CHIP

5 - 63