查询HMC263供应商
MICROWAVE CORPORATION
Typical Applications
1
The HMC263 is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• VSAT
• SATCOM
Functional Diagram
AMPLIFIERS - CHIP
v02.0701
HMC263
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Features
Excellent Noise Figure: 2.0 dB
Gain: 22 dB
Single Supply : +3V @ 58 mA
Small Size: 1.33 mm x 2.48 mm
General Description
The HMC263 chip is a GaAs MMIC Low Noise
Amplifi er (LNA) which covers the frequency range
of 24 to 36 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its
small (3.29 mm2) size. The chip utilizes a GaAs
PHEMT process offering 22 dB gain from a single
bias supply of + 3V @ 58 mA with a noise fi gure
of 2.0 dB. All data is with the chip in a 50 ohm test
fi xture connected via 0.076 mm (3 mil) diameter
ribbon bonds of minimal length 0.31 mm (<12
mils). The HMC263 may be used in conjunction
with HMC259, HMC264, or HMC265 mixers to
realize a millimeterwave system receiver.
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Electrical Specifi cations, T
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 24 - 27 27 - 32 32 - 36 GHz
Gain 20 23 26 18 22 26 17 20 23 dB
Gain Variation Over Temperature 0.03 0.04 0.03 0.04 0.03 0.04 dB/°C
Noise Figure 2.5 3.3 2.0 2.5 2.1 2.6 dB
Input Return Loss 7 10 7 10 7 10 dB
Output Return Loss 7 10 9 12 8 11 dB
Output Power for 1 dB Compression (P1dB) -1 3 1 5 4 8 dBm
Saturated Output Power (Psat) 1 5 3 7 6 10 dBm
Output Third Order Intercept (IP3) 5 10 7 13 11 17 dBm
Supply Current (Idd) (@ Vdd = +3.0V) 58 58 58 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
= +25° C, Vdd = +3V
A
Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0701
HMC263
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
Gain vs. Temperature @ Vdd = +3V Gain vs. Temperature @ Vdd = +5V
30
+25C
-55C
25
20
GAIN (dB)
15
10
20 25 30 35 40
FREQUENCY (GHz)
+85C
Return Loss @ Vdd = +3V Return Loss @ Vdd = +5V
0
-5
30
25
20
GAIN (dB)
15
10
20 25 30 35 40
FREQUENCY (GHz)
0
-5
+25C
-55C
+85C
1
AMPLIFIERS - CHIP
-10
-15
-20
RETURN LOSS (dB)
-25
-30
20 25 30 35 40
FREQUENCY (GHz)
Noise Figure
vs. Temperature @ Vdd = +3V
6
5
4
3
2
NOISE FIGURE (dB)
1
0
20 25 30 35 40
FREQUENCY (GHz)
S11
S22
+25C
-55C
+85C
-10
-15
-20
RETURN LOSS (dB)
-25
-30
20 25 30 35 40
FREQUENCY (GHz)
Noise Figure
vs. Temperature @ Vdd = +5V
6
5
4
3
2
NOISE FIGURE (dB)
1
0
20 25 30 35 40
FREQUENCY (GHz)
S11
S22
+25C
-55C
+85C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 3
MICROWAVE CORPORATION
v02.0701
HMC263
GaAs MMIC LOW NOISE
Gain & Noise Figure
vs. Supply Voltage @ 30 GHz
1
22
21.5
21
20.5
GAIN (dB)
20
19.5
19
2.5 3 3.5 4 4.5 5 5.5
Vdd SUPPLY VOLTAGE (Vdc)
Output P1dB @ Vdd = +3V Output P1dB @ Vdd = +5V
AMPLIFIERS - CHIP
14
12
10
8
6
4
P1dB (dBm)
2
0
-2
-4
20 25 30 35 40
FREQUENCY (GHz)
+25C
-55C
+85C
3.25
3
2.75
2.5
2.25
2
1.75
NF (dB)
AMPLIFIER, 24 - 36 GHz
Isolation
0
-10
-20
-30
-40
ISOLATION (dB)
-50
-60
-70
20 25 30 35 40
FREQUENCY (GHz)
14
12
10
8
6
4
2
P1dB (dBm)
0
-2
-4
-6
20 25 30 35 40
FREQUENCY (GHz)
+25C
-55C
+85C
3V
5V
1 - 4
Output IP3 @ Vdd = +3V Output IP3 @ Vdd = +5V
25
20
15
10
IP3 (dBm)
5
0
20 25 30 35 40
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
+25C
-55C
+85C
Order Online at www.hittite.com
25
20
15
10
IP3 (dBm)
5
0
20 25 30 35 40
FREQUENCY (GHz)
+25C
-55C
+85C
MICROWAVE CORPORATION
v02.0701
HMC263
GaAs MMIC LOW NOISE
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2) +5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc) -5 dBm
Channel T emperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 7.69 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
0.692 W
130 °C/W
Outline Drawing
AMPLIFIER, 24 - 36 GHz
1
AMPLIFIERS - CHIP
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 5
MICROWAVE CORPORATION
v02.0701
HMC263
GaAs MMIC LOW NOISE
Pad Description
1
Pad Number Function Description Interface Schematic
1 RF Input This pad is AC coupled and matched to 50 Ohm from 24 - 36 GHz
2, 3 Vd1, Vd2
AMPLIFIERS - CHIP
4 RF Output This pad is AC coupled and matched to 50 Ohm from 24 - 36 GHz
AMPLIFIER, 24 - 36 GHz
Power supply for the 4-stage amplifi er. An external RF bypass capaci-
tor of 100 - 300 pF is required. The bond length to the capacitor should
be as short as possible. The ground side of the capacitor should be
connected to the housing ground.
1 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
Ribbon Bond
Ribbon Bond
v02.0701
HMC263
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Assembly Diagrams
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thic k molybden um heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
1
AMPLIFIERS - CHIP
Ribbon Bond
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
Ribbon Bond
1 - 7
MICROWAVE CORPORATION
v02.0701
HMC263
GaAs MMIC LOW NOISE
1
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal
and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent
tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet,
tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically con-
AMPLIFIERS - CHIP
ductive epoxy. The mounting surface should be clean and fl at.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool
temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should
be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20
seconds. No more than 3 seconds of scrubbing should be required for attachment.
AMPLIFIER, 24 - 36 GHz
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around
the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports)
0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18
to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
1 - 8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0701
HMC263
GaAs MMIC LOW NOISE
Notes:
AMPLIFIER, 24 - 36 GHz
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 9
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