Passive: No DC Bias Required
Input IP3: +20 dBm
LO/RF Isolation: 39 dB
Small Size: 0.55mm
General Description
The HMC260 is a passive double balanced mix er
that can be used as an upconverter or downconverter between 14 and 26 GHz. The miniature monolithic mixer (MMIC) requires no external
components or matching circuitry. The HMC260
provides excellent LO to RF and LO to IF suppression due to optimized balun structures. The
mixer operates with LO drive levels above +9
dBm. Measurements were made with the chip
mounted and bonded into in a 50 ohm test fi xture.
Data includes the parasitic effects of wire bond
assembly. Connections were made with a 3 mil
ribbon bond with minimal length (<12 mil).
2
MIXERS - CHIP
Electrical Specifi cations, T
Frequency Range, RF & LO14 - 26GHz
Frequency Range, IFDC - 8GHz
Conversion Loss7.510.5dB
Noise Figure (SSB)7.510.5dB
LO to RF Isolation3039dB
LO to IF Isolation2535dB
RF to IF Isolation1825dB
IP3 (Input)1320dBm
IP2 (Input)4555dBm
1 dB Gain Compression (Input)611dBm
*Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.
Parameter
= +25° C
A
LO = +13 dBm, IF = 1 GHz
Units
Min.Typ.Max.
5 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
Conversion Gain vs.
Temperature @ LO = +13 dBm
0
-3
-6
-9
CONVERSION GAIN (dB)
-12
v01.0301
+ 25 C
+ 85 C
- 55 C
HMC260
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
Isolation @ LO = +13 dBm
0
-10
-20
-30
-40
ISOLATION (dB)
-50
RF/IF
LO/RF
LO/IF
-15
1214161820222426
FREQUENCY (GHz)
Conversion Gain vs. LO Drive
0
-3
-6
-9
CONVERSION GAIN (dB)
-12
-15
1214161820222426
FREQUENCY (GHz)
IF Bandwidth @ LO = +13 dBm
0
+ 9 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm
-60
1214161820222426
FREQUENCY (GHz)
Return Loss @ LO = +13 dBm
0
-5
-10
-15
RETURNLOSS (dB)
-20
-25
1214161820222426
FREQUENCY (GHz)
Upconverter Performance
Conversion Gain @ LO = +13 dBm
0
5
LO
RF
MIXERS - CHIP
-4
-8
-12
RESPONSE (dB)
-16
-20
024681012
IF Return Loss
Conversion Gain
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
-4
-8
-12
CONVERSION GAIN (dB)
-16
-20
1214161820222426
FREQUENCY (GHz)
5 - 45
MICROWAVE CORPORATION
Input IP3 vs. LO Drive *
25
v01.0301
HMC260
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
Input IP3 vs.
Temperature @ LO = +13 dBm *
25
20
15
10
5
THIRD ORDER INTERCEPT (dBm)
0
14161820222426
5
Input IP2 vs. LO Drive *
100
90
80
70
60
MIXERS - CHIP
50
SECOND ORDER INTERCEPT (dBm)
40
14161820222426
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
+ 11 dBm
+ 13 dBm
+ 15 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm
20
15
10
5
THIRD ORDER INTERCEPT (dBm)
0
14161820222426
LO FREQUENCY (GHz)
Input IP2 vs.
Temperature @ LO = +13 dBm *
100
90
80
70
60
50
SECOND ORDER INTERCEPT (dBm)
40
14161820222426
LO FREQUENCY (GHz)
+ 25 C
+ 85 C
- 55 C
+ 25 C
+ 85 C
- 55 C
5 - 46
Input P1dB vs.
Temperature @ LO = +13 dBm
16
14
12
10
P1dB (dBm)
+ 25 C
8
6
14 15 16 17 18 19 20 21 22 23 24 25 26
FREQUENCY (GHz)
* Two-tone input power = -5 dBm each tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
+ 85 C
- 55 C
Order Online at www.hittite.com
MxN Spurious Outputs
nLO
mRF01234
0xx919xxxx
12004637xx
2 6472688295
3 xx92998394
4xxxx102>110>110
RF = 21 GHz @ -10 dBm
LO = 22 GHz @ +13 dBm
All values in dBc below the IF output power level.
MICROWAVE CORPORATION
v01.0301
GaAs MMIC FUNDAMENTAL
Absolute Maximum Ratings
RF / IF Input+15 dBm
LO Drive+27 dBm
Storage Temperature-65 to +150 °C
Operating Temperature-55 to +85 °C
IF DC Current±4 mA
Outline Drawing (See Handling Mounting Bonding Note)
HMC260
MIXER, 14 - 26 GHz
5
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
3. TYPICAL BOND PAD IS .004” SQUARE.
4. BOND PAD SPACING CENTER TO CENTER IS .006”.
5. BACKSIDE METALLIZATION: GOLD.
6. BOND PAD METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5 - 47
5
Ribbon Bond
Ribbon Bond
MICROWAVE CORPORATION
v01.0301
MIC Assembly Techniques
HMC260
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate . One wa y to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to
minimize inductance on RF, LO & IF ports.
MIXERS - CHIP
5 - 48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 4060 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with
a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A
minimum amount of ultrasonic energy should be applied to achieve reliab le bonds. All bonds should be as short as possible, less than
12 mils (0.31 mm).
5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5 - 49
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