查询HMC232供应商
7
MICROWAVE CORPORATION
v02.1203
GaAs MMIC SPDT NON-REFLECTIVE
Typical Applications
Broadband switch for DC - 15 GHz applications:
• Fiber Optics
• Microwave Radio
• Military & Space
• Test Equipment
• VSAT
Functional Diagram
HMC232
SWITCH, DC - 15.0 GHz
Features
High Isolation: >50 dB @ 10 GHz
Low Insertion Loss: 1.4 dB @ 6 GHz
Non-Refl ective Design
Die Size: 1.04 mm x 2.05 mm x 0.1 mm
Direct Replacement for HMC132
General Description
The HMC232 is a broadband non-refl ective GaAs
MESFET SPDT MMIC chip. Covering DC to 15
GHz, the switch features over 55 dB isolation
at lower frequencies and over 45 dB at higher
frequencies due to the implementation of on-chip
via hole structures. The switch operates using two
negative control voltage logic lines (A&B) of -5/0V
and requires no Vee. Alternate A & B control pads
are provided to ease MIC implementation. All data
shown is tested with the chip in a 50 Ohm test fi xture
connected via 0.025 mm (1 mil) diameter wire bonds
of 0.5 mm (20 mils) length. This product is a f orm, fi t
& functional replacement for the HMC132.
Electrical Specifi cations, T
Insertion Loss
SWITCHES - CHIP
Isolation
Return Loss “On State”
Return Loss RF1, RF2 “Off State”
Input Power for 1 dB Compression 0.5 - 15 GHz 21 26 dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
7 - 2
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
= +25° C, With 0/-5V Control, 50 Ohm System
A
Parameter Frequency Min. Typ. Max. Units
DC - 6 GHz
DC - 10 GHz
DC - 15 GHz
DC - 6 GHz
DC - 10 GHz
DC - 15 GHz
DC - 6 GHz
DC - 15 GHz
DC - 6 GHz
DC - 15 GHz
0.5 - 15 GHz 44 49 dBm
DC - 15 GHz 3
50
45
40
1.4
2.2
3.1
55
50
45
18
12
14
13
1.7
2.5
3.4
5
dB
db
dB
dB
dB
dB
dB
dB
dB
dB
ns
ns
Order Online at www.hittite.com
v02.1203
10
15
20
25
30
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
0.1 dB Compression Point
1 dB Compression Point
INPUT P1dB (dBm)
FREQUENCY (GHz)
HMC232
MICROWAVE CORPORATION
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
Insertion Loss vs. Temperature Isolation
0
-1
-2
-3
-4
INSERTION LOSS (dB)
-5
-6
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
+25 C
+85 C
-55 C
FREQUENCY (GHz)
Return Loss 0.1 and 1 dB Input Compression Point
0
0
-10
-20
-30
-40
-50
-60
ISOLATION (dB)
-70
-80
-90
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
RF1
RF2
FREQUENCY (GHz)
-5
-10
-15
RETURN LOSS (dB)
-20
-25
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
RFC
RF1, RF2 ON
RF1, RF2 OFF
FREQUENCY (GHz)
7
Input Third Order Intercept Point
60
55
50
45
40
INPUT IP3 (dBm)
35
+25 C
+85 C
-55 C
SWITCHES - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
30
012345678910111213141516
FREQUENCY (GHz)
Order Online at www.hittite.com
7 - 3
MICROWAVE CORPORATION
v02.1203
HMC232
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
7
Absolute Maximum Ratings
RF Input Power (Vctl = -5V)
(0.5 - 15 GHz)
Control Voltage Range (A & B) +1.0V to -7.5 Vdc
Channel T emperature 150 °C
Thermal Resistance 92 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
+30 dBm (@ +50 °C)
Outline Drawing
Control V oltages
State Bias Condition
Low 0 to -0.2V @ 10 uA Max.
High -5V @ 10 uA Typ. to -7V @ 45 uA Typ.
T ruth T able
Control Input Signal Path State
A B RFC to RF1 RFC to RF2
High Low ON OFF
Low High OFF ON
Caution: Do not “Hot Switch” power levels greater than +26 dBm
(Vctl = 0/-5 Vdc).
SWITCHES - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
7 - 4
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. BOND PADS ARE 0.004” SQUARE
3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006”
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE OF DIE IS GROUND
7. DIE THICKNESS IS .004”
8. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS
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MICROWAVE CORPORATION
Suggested Driver Circuit
v02.1203
HMC232
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
2, 5, 8, 10 A
3, 6, 9 B
1, 4, 7 RF1, RFC, RF2
GND Die bottom must be connected to RF ground.
This pad is DC coupled and matched to 50 Ohms. Blocking capacitors
See truth table and control voltage table.
Alternate A & B control pads provided.
See truth table and control voltage table.
Alternate A & B control pads provided.
are required if the RF line potential is not equal to 0V.
7
SWITCHES - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 5
MICROWAVE CORPORATION
Assembly Diagram
v02.1203
HMC232
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
7
Mounting & Bonding Techniques for Microwave GaAs MMICs
The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for
bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the
die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thic k molybden um heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.152 mm (6 mils).
SWITCHES - CHIP
7 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.1203
GaAs MMIC SPDT NON-REFLECTIVE
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
HMC232
SWITCH, DC - 15.0 GHz
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should
be clean and fl at.
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter
of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as
possible <0.31 mm (12 mils).
7
SWITCHES - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 7
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