Page 1
MICROWAVE CORPORATION
FEBRUARY 2001
3 - 10
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
MULTIPLIERS
3
DIE
Features
GaAs MMIC
2 to 6 GHz
Frequency Doubler
CONVERSION LOSS: 17 dB
Fo, 3Fo, 4Fo ISOLATION: > 35 dB
INPUT DRIVE LEVEL :10 to 20 dBm
General Description
The HMC157 is a miniature frequency doubler in a MMIC die. Suppression of undesired fundamental and higher order harmonics is 35 to 60 dB with respect to input signal
level and 18 to 43 dB with respect to the
desired output signal level. The doubler
uses the same diode/balun technology used
in Hittite MMIC mixers, features small size
and requires no DC bias.
Typical Performance vs.Drive Level
10 15 20 dBm
Input Frequency Range 1.5 - 2.0 1.0 - 2.0 1.0 - 2.0 GHz
OutputFrequency Range 3.0 - 4.0 2.0 - 4.0 2.0 - 4.0 GHz
Conversion Loss <18 <16 <17 dB
Performance for Input Signals in the 1.0 - 2.0 GHz Band (+15dBm Drive)
Min. Typ. Max.
Fo Isolation (with respect to input level) 35 50 dB
3Fo Isolation (with respect to input level) 40 50 dB
4Fo Isolation (with respect to input level) 30 35 dB
Guaranteed Performance, 50 Ohm system -55 to +85 deg C
GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT
HMC157
V01.0700
Page 2
MICROWAVE CORPORATION
FEBRUARY 2001
3 - 11
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
3
MULTIPLIERS
DIE
-50
-40
-30
-20
-10
0
22.533.544.55
Input=+10dBm
Input=+15dBm
Input=+20dBm
CONVERSION GAIN (dB)
OUTPUT FREQUENCY (GHz)
GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
12345678910
Fo
3Fo
4Fo
ISOLATION(dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
1234567
Input=+10dBm
Input=+15dBm
Input=+20dBm
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
1234567
Input=+10dBm
Input=+15dBm
Input=+20dBm
OUTPUT RETURN LOSS (dB)
OUTPUT FREQUENCY (GHz)
Conversion Loss vs. Drive Level
Input Return Loss vs. Drive level
Isolation @ +15 dBm Drive Level *
Output Return Loss vs. Drive Level
* With respect to input level
HMC157
V01.0700
Page 3
MICROWAVE CORPORATION
FEBRUARY 2001
3 - 12
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
MULTIPLIERS
3
DIE
Schematic
RF OUTRF IN
(0.046)
(0.046)
(0.023)
(0.023)
(0.041)
(0.005)
Hittite
4415
RFin RFout
1.041
1.168
0.127
1.168
0.584
0.584
Absolute Maximum Ratings
Input Drive +27 dBm
Storage Temperature -65 to +150 deg C
Operating Temperature -55 to +125 deg C
Outline Drawing
GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT
THREE PADS ON EACH CORNER MUST BE BONDED TO GROUND (12 TOTAL).
ALL DIMENSIONS IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ±0.025 (0.001)
DIE THICKNESS IS 0.254 (0.010)
BOND PADS ARE 0.100 (0.004) SQUARE
EQUALLY SPACED AT 0.150 (0.006) CENTERS
BACKSIDE METALLIZATION: NONE
BOND PAD METALLIZATION: GOLD
HMC157
V01.0700
Page 4
MICROWAVE CORPORATION
FEBRUARY 2001
3 - 13
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
3
MULTIPLIERS
DIE
GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT
Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22
grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package. RF bonds should be as short as
possible.
Handling Precautions
Wire Bonding
The chip is not back-metallized and can be die mounted with electrically conductive epoxy. The mounting
surface should be clean and flat.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Mounting
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
HMC157
V01.0700
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