The HMC226 is a low-cost SPDT switch in a 6-lead
SOT26 package for use in transmit-receive applications which require very low distortion at high signal
power levels. The device can control signals from
DC to 2.0 GHz and is especially suited for 450 MHz,
900 MHz, and 1.8 - 2.0 GHz applications with 0.5 to
0.8 dB loss. The design provides exceptional P1dB
and intermodulation performance; a +35 dBm 1dB
compression point and +55 dBm third order intercept at +3 volt bias. RF1 and RF2 are refl ective
opens when “Off”. On-chip circuitry allows single
positive supply operation at very low DC current
with control inputs compatible with CMOS and most
TTL logic families.
Electrical Specifi cations, T
Insertion Loss
SWITCHES - SMT
Isolation
Return Loss
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +26 dBm Each Tone)
Switching CharacteristicsDC - 2.0 GHz
14 - 76
= +25° C, Vctl = 0/+3 Vdc, 50 Ohm System
A
ParameterFrequencyMin.Typ.Max.Units
0/5V Control
0/3V Control
0/5V Control
0/3V Control
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
0.3 - 2.0 GHz
0.3 - 2.0 GHz
23
17
12
23
21
14
34
31
0.5
0.6
0.8
26
20
15
27
25
18
38
35
61
55
70
140
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
0.8
0.9
1.2
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
ns
MICROWAVE CORPORATION
v02.0502
GaAs MMIC +3V SOT26 TRANSMIT/
RECEIVE SWITCH, DC - 2.0 GHz
Insertion Loss vs TemperatureIsolation
HMC226
0
-0.5
-1
-1.5
-2
INSERTION LOSS (dB)
-2.5
-3
00.511.522.5
+25 C
FREQUENCY (GHz)
+85 C
0
-5
-10
-15
-20
-25
RETURN LOSS (dB)
-30
0
-40 C
-10
-20
-30
ISOLATION (dB)
-40
-50
00.511.522.5
FREQUENCY (GHz)
Return Loss
14
RFC
RF1, RF2
-35
00.511.522.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14 - 77
MICROWAVE CORPORATION
v02.0502
HMC226
GaAs MMIC +3V SOT26 TRANSMIT/
RECEIVE SWITCH, DC - 2.0 GHz
14
Input 0.1 and 1.0 dB Compression
vs. Control Voltage @ 900 MHz
40
35
1 dB Compression
30
0.1 dB Compression
25
INPUT COMPRESSION (dBm)
20
2345678
Control Voltage (Vdc)
Truth Table
*Control Input Voltage Tolerances are ± 0.2 Vdc.
Control Input*Control CurrentSignal Path State
A
(Vdc)B(Vdc)
0+3-55ONOFF
Ia
(uA)
Compression vs.
Control Voltage @ 900 MHz
Control
Input
(Vdc)(dBm)(dBm)
+33035
+53338
+73538.5
Caution: Do not operate continuously at power levels >1 dB
compression and do not “hot switch” power levels greater than
Ib
(uA)
+23dBm (V
RF to
RF1
= +3Vdc).
CTL
RF to
RF2
Input Power
for 0.1 dB
Compression
Input Power
Compression
for 1.0 dB
SWITCHES - SMT
+305-5OFFON
0+5-1010ONOFF
+5010-10OFFON
0+8-4545ONOFF
+8045-45OFFON
DC Blocks are required at ports RFC, RF1 and RF2.
14 - 78
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0502
Absolute Maximum Ratings
HMC226
GaAs MMIC +3V SOT26 TRANSMIT/
RECEIVE SWITCH, DC - 2.0 GHz
Max. Input Power
(V
= 0/+3V)
CTL
Control Voltage Range (A & B)-0.2 to +12 Vdc
Storage Temperature-65 to +150 °C
Operating Temperature-40 to +85 °C
0.05 GHz
0.5 - 2 GHz
+27 dBm
+36 dBm
Outline Drawing
14
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14 - 79
MICROWAVE CORPORATION
v02.0502
Typical Application Circuit
HMC226
GaAs MMIC +3V SOT26 TRANSMIT/
RECEIVE SWITCH, DC - 2.0 GHz
14
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS
logic gates.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of
operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
SWITCHES - SMT
14 - 80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
Evaluation Circuit Board
v02.0502
HMC226
GaAs MMIC +3V SOT26 TRANSMIT/
RECEIVE SWITCH, DC - 2.0 GHz
List of Material
ItemDescription
J1 - J3PC Mount SMA RF Connector
J4 - J7DC Pin
C1 - C3330 pF capacitor, 0402 Pkg.
U1HMC226 T/R Switch
PCB*101659 Evaluation PCB
* Circuit Board Material: Rogers 4350
The circuit board used in the fi nal application should
be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown above. The evaluation circuit board shown above is available from
Hittite Microwave Corporation upon request.
14
SWITCHES - SMT
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14 - 81
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