HIT 2SK3070-S, 2SK3070-L Datasheet
2SK3070(L),2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-684G (Z)
8th. Edition
February 1999
Features
• Low on-resistance
R
DS(on)
= 4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
Datasheet Title
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
40 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
75 A
Drain peak current I
D(pulse)
Note
1
300 A
Body-drain diode reverse drain current I
DR
75 A
Avalanche current IAP
Note
3
50 A
Avalanche energy EAR
Note
3
333 mJ
Channel dissipation Pch
Note
2
100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Datasheet Title
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
40——V I
D
= 10 mA, VGS = 0
Gate to source leak current I
GSS
——±0.1 µAVGS = ±20 V, VDS = 0
Zero gate voltege drain current I
DSS
——10µAVDS = 40 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
Note
1
Static drain to source on state R
DS(on)
— 4.5 5.8 mΩ ID = 40 A, VGS = 10 V
Note
1
resistance — 6.5 10 mΩ ID = 40 A, VGS = 4 V
Note
1
Forward transfer admittance |yfs|5080—S I
D
= 40 A, VDS = 10 V
Note
1
Input capacitance Ciss — 6800 — pF VDS = 10 V
Output capacitance Coss — 1300 — pF VGS = 0
Reverse transfer capacitance Crss — 380 — pF f = 1 MHz
Total gate charge Qg — 130 — nc VDD = 25 V
Gate to source charge Qgs — 25 — nc VGS = 10 V
Gate to drain charge Qgd — 30 — nc ID = 75 A
Turn-on delay time t
d(on)
— 60 — ns VGS = 10 V, ID = 40 A
Rise time t
r
— 300 — ns RL = 0.75 Ω
Turn-off delay time t
d(off)
— 550 — ns
Fall time t
f
— 400 — ns
Body–drain diode forward voltage V
DF
— 1.05 — V IF = 75 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
— 90 — ns IF = 75 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 1. Pulse test
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