HIT 2SK3000 Datasheet
2SK3000
Silicon N Channel MOS FET
Low Frequency Power Switching
Features
• Low on-resistance
R
= 0. 25Ω typ. (VGS = 10 V, ID = 450 mA)
DS(on)
• 4V gate drive devices.
• Small package (MPAK)
• Expansive drain to source surge power capability
Outline
ADE-208-585 (Z)
1st. Edition
December 1997
MPAK
2
G
3
1
D
3
1
S
2
1. Source
2. Gate
3. Drain
2SK3000
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (10 mm x 10 mm x 1 mm
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Drain to source voltage V
Gate to source breakdown
DS(SUS)
V
(BR)GSS
voltage
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
R
DSS
GSS
GS(off)
DS(on)
resistance
Static drain to source on state
R
DS(on)
resistance
Forward transfer admittance |yfs| 0.5 1.2 — S ID = 450 mA
Input capacitance Ciss — 14.0 — pF VDS = 10V
Output capacitance Coss — 68 — pF VGS = 0
Reverse transfer capacitance Crss — 3.0 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
Note: 3. Pulse test
4. Marking is “ZY”.
40 — 60 V ID = 100µA, VGS = 0
40 — — V L = 100µH, ID = 3 A
±10——V I
— — 1.0 µAV
——±5 µAV
1.1 — 2.1 V ID = 10µA, VDS = 5V
— 0.3 0.5 Ω ID = 450 mA
— 0.25 0.3 Ω ID = 450 mA
— 0.12 — µsV
— 0.6 — µsR
— 1.7 — µs
— 1.4 — µs
40 V
±10 V
1.0 A
4.0 A
1.0 A
400 mW
t
)
= ±100µA, VDS = 0
G
= 40 V, VGS = 0
DS
= ±6.5V, VDS = 0
GS
= 4V
V
GS
V
= 10V
GS
V
= 10V
DS
= 4V, ID = 450 mA
GS
= 22Ω
L
Note3
Note3
Note3
2
Main Characteristics
2SK3000
Power vs. Temperature Derating
0.8
0.6
0.4
0.2
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
5.0
4.0
D
Typical Output Characteristics
10 V
6 V
5 V
4 V
4.5 V
3.0
3.5 V
2.0
Pulse Test
Maximum Safe Operation Area
5
0.1 ms
2
1
D
0.5
0.2
0.1
0.05
Operation in
Drain Current I (A)
this area is
0.02
limited by R
0.01
Ta = 25 °C
0.05
0.2 0.5 2 5 20
PW = 100 ms (1 shot)
DC Operation
DS(on)
11050
1 ms
10 ms
Note 5
Drain to Source Voltage V (V)
Note5:Whenusingtheglassepoxyboard
(10mmx10mmx1mm)
Typical Transfer Characteristics
10
1
D
100m
125°C
25°C
Tc = –25°C
10m
50 µs
100 200
DS
t
Drain Current I (A)
1.0
V = 2.5 V
0
246810
Drain to Source Voltage V (V)
GS
3 V
DS
Drain Current I (A)
1m
100µ
0
12345
Gate to Source Voltage V (V)
V = 5 V
DS
Pulse Test
GS
3
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