HIT 2SC4499(S), 2SC4499(L) Datasheet
2SC4499(L)/(S)
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
4
1
2
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
2SC4499(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
500 V
Collector to emitter voltage V
CEO
400 V
Emitter to base voltage V
EBO
10 V
Collector current I
C
0.5 A
Collector peak current I
C(peak)
1.0 A
Collector power dissipation P
C
0.75 W
PC*
1
10
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain
voltage
V
CEO(sus)
400 — — V IC = 0.1 A, RBE = ∞
L = 100 mH
Emitter to base breakdown
voltage
V
(BR)EBO
10 — — V IE = 10 mA, IC = 0
Collector cutoff current I
CBO
——20µAV
CB
= 400 V, IE = 0
I
CEO
— — 50 VCE = 350 V, RBE = ∞
DC current transfer ratio h
FE1
12 — — VCE = 5 V, IC = 0.25 A*
1
h
FE2
5—— V
CE
= 5 V, IC = 0.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
— — 1.0 V IC = 0.25 A, IB = 0.05 A*
1
Base to emitter saturation
voltage
V
BE(sat)
— — 1.5 V IC = 0.25 A, IB = 0.05 A*
1
Turn on time t
on
— — 1.0 µsI
C
= 0.5 A, IB1 = –IB2 = 0.1 A,
Storage time t
stg
— — 2.0 µsV
CC
≅ 150 V
Fall time t
f
— — 1.0 µs
Note: 1. Pulse test.
2SC4499(L)/(S)
3
Maximum Collector Dissipation Curve
12
8
4
0 50 100 150
Case temperature T
C
(°C)
Collector power dissipation P
C
(W)
10
1.0
0.1
0.01
Collector current I
C
(A)
0.001
1 3 30 30010 100 1,000
Collector to emitter voltage V
CE
(V)
DC Operation(T
C
= 25°C)
PW = 1 ms
250 µs
50 µs
Area of Safe Operation
25 µs
Ta = 25°C, 1 Shot
Collector Current Derating Rate
Case temperature T
C
(°C)
IS/B Limit Area
100
80
60
40
20
0 50 100 150
Collector current derating rate (%)
Transient Thermal Resistance
10 ms–10 s
10 µs–10 ms
10
3
1.0
0.3
0.1
0.03
0.01
0.01 0.1 1.0 10 (s)
0.01 0.1 1.0 10 (ms)
Time t
Thermal resistance θ
j-c
(°C/W)
TC = 25°C
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