HIT 2SC4416 Datasheet
2SC4416
Silicon NPN Epitaxial
Application
UHF Frequency conversion, Wide band amplifier
Outline
MPAK
3
1
2
1. Base
2. Emitter
3. Collector
2SC4416
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
Collector to emitter saturation
I
V
CBO
CEO
EBO
CE(sat)
voltage
DC current transfer ratio h
FE
Collector output capacitance Cob — 0.85 1.3 pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
Conversion gain CG 15 19 — dB VCC = 5 V, IC = 0.8 mA,
Noise figure NF — 8 1.2 dB
Note: Marking is “XB–”.
25——V I
— — 0.1 µAVCB = 15 V, IE = 0
——10µAVCB = 13 V, RBE = ∞
— — 0.3 µAVEB = 3 V, IC = 0
— — 0.3 V IC = 20 mA, IB = 4 mA
50 — 180 VCE = 5 V, IC = 5 mA
3.0 3.8 — GHz VCE = 5 V, IC = 20 mA
25 V
13 V
3V
50 mA
150 mW
= 10 µA, IE = 0
C
f
= 900 MHz,
in
f
= 930 MHz (–5dBm),
OSC
f
= 30 MHz
out
2
Maximum Collector Dissipation Curve
150
(mW)
C
2SC4416
DC Current Transfer Ratio vs.
Collector Current
200
FE
VCE = 5 V
160
100
50
Collector Power Dissipation P
0
15010050
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
5
VCE = 5 V
4
(GHz)
T
3
2
1
Gain Bandwidth Product f
0
152021050
Collector Current I
(mA)
C
120
80
40
DC Current Transfer Ratio h
0
Collector Current I
(mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
1.2
(pF)
ob
1.1
IE = 0
f = 1 MHz
1.0
0.9
0.8
Collector Output Capacitance C
0.7
12 1052050
Collector to Base Voltage V
CB
(V)
502010521
3
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