HIT 2SC4367 Datasheet

Application

High Frequency amplifier

Outline

TO-92MOD

2SC4367

Silicon NPN Epitaxial

1. Emitter

2. Collector

3. Base

3

2

1

2SC4367

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P

CBO

CEO

EBO

C

C (peak)

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation

V

CBO

FE

CE(sat)

voltage
Gain bandwidth product f

T

Collector output capacitance Cob — 1.3 — pF VCB = 10 V, IE = 0, f = 1 MHz

30——V I

20——V I

3 ——V I

— — 1.0 µAVCB = 10 V, IE = 0
40 — — VCE = 10 V, IC = 10 mA
— — 1.0 V IC = 20 mA, IB = 4 mA

600 1000 — MHz VCE = 10 V, IC = 10 mA

30 V
20 V
3V
100 mA
200 mA
600 mW

= 10 µA, IE = 0

C

= 3 mA, RBE = ∞

C

= 10 µA, IC = 0

E

2