HIT 2SC4366 Datasheet
Application
Low Frequency amplifier
Outline
MPAK
2SC4366
Silicon NPN Epitaxial
3
1
2
1. Emitter
2. Base
3. Collector
2SC4366
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Base to emitter voltage V
DC current transfer ratio h
Collector to emitter saturation
voltage
Note: Marking is “ZI–”.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
BE
FE1
h
FE2
V
CE(sat)
60——V I
50——V I
15——V I
——1 µAVCB = 50 V, IE = 0
— — 0.75 V VCE = 6 V, IC = 1 mA
800 — 2000 VCE = 6 V, IC = 100 mA
500 — — VCE = 6 V, IC = 1 mA
— — 0.3 V IC = 300 mA, IB = 30 mA
60 V
50 V
15 V
300 mA
150 mW
= 10 µA, IE = 0
C
= 1 mA, RBE = ∞
C
= 10 µA, IC = 0
E
(pulse)
(pulse)
2
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