HIT 2SC4308 Datasheet

Application
VHF Wide band amplifier
Outline
2SC4308
Silicon NPN Epitaxial Planar
1. Base
2. Emitter
3. Collector
3
2
1
2SC4308
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector peak current i Collector power dissipation P
CBO
CEO
EBO
C
C (peak)
C
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage Collector to emitter breakdown
V
(BR)CEO
voltage Collector cutoff current I Emitter cutoff current I DC current transfer ratio h Gain bandwidth product f
CBO
EBO
FE
T
Collector output capacitance Cob 4.0 pF VCB = 10 V, IE = 0, f = 1 MHz
30——V I
20——V I
——1 µAVCB = 25 V, IE = 0 ——10µAVEB = 3 V, IE = 0 50 200 VCE = 5 V, IC = 50 mA
1.5 2.5 GHz VCE = 5 V, IC = 50 mA
30 V 20 V 3V 300 mA 500 mA 600 mW
= 100 µA, IE = 0
C
= 1 mA, RBE =
C
2
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