HIT 2SC4265 Datasheet
Silicon NPN Epitaxial
Application
VHF RF amplifier, Local oscillator, Mixer
Outline
CMPAK
2SC4265
3
1
2
1. Emitter
2. Base
3. Collector
2SC4265
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Collector cutoff current I
Emitter cutoff current I
Collector to emitter saturation
V
CBO
EBO
CE(sat)
voltage
DC current transfer ratio h
FE
Collector output capacitance Cob — — 1.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
Note: Marking is “JC”.
30——V I
20——V I
— — 0.5 µAVCE = 15 V, IE = 0
——10µAVEB = 3 V, IC = 0
— — 1.0 V IC = 20 mA, IB = 4 mA
40 — — VCE = 10 V, IC = 10 mA
600 — — MHz VCE = 10 V, IC = 10 mA
30 V
20 V
3V
50 mA
100 mW
= 10 µA, IE = 0
C
= 1 mA, RBE = ∞
C
See characteristic curves of 2SC2735.
2
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