HIT 2SC4264 Datasheet

2SC4264

Silicon NPN Epitaxial

Application

VHF / UHF RF amplifier, Local oscillator, Mixer

Outline

CMPAK

3

1

2

1. Emitter

2. Base

3. Collector

2SC4264

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector cutoff current I

Emitter cutoff current I
Collector to emitter saturation

I

V

CBO

CEO

EBO

CE(sat)

voltage
DC current transfer ratio h

FE

Collector output capacitance Cob — — 1.5 pF VCB = 10 V, IE = 0, f = 1MHz
Gain bandwidth product f

T

Note: Marking is “GC”.

20——V I

— — 0.5 µAVCB = 15 V, IE = 0
——10µAVCE = 11 V, RBE = ∞
— — 1.0 µAVEB = 3 V, IC = 0
— — 0.7 V IC = 10 mA, IB = 5 mA

20 — — VCE = 10 V, IC = 5 mA

1.4 — — GHz VCE = 10 V, IC = 10 mA

20 V
11 V
3V
50 mA
100 mW

= 10 µA, IE = 0

C

See characteristic curves of 2SC2734.

2