HIT 2SC4196 Datasheet
Application
UHF Local oscillator
Outline
MPAK
2SC4196
Silicon NPN Epitaxial
3
1
2
1. Emitter
2. Base
3. Collector
2SC4196
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
Collector to emitter saturation
I
V
CBO
CEO
EBO
CE(sat)
voltage
DC current transfer ratio h
FE
Collector output capacitance Cob — 0.7 1.0 pF VCB = 10 V, IE = 0, f = 1MHz
Gain bandwidth product f
Oscillating output voltage V
T
OSC
Note: Marking is “QI–”.
25——V I
— — 0.3 µAVCB = 15 V, IE = 0
——10µAVCE = 15 V, RBE = ∞
— — 1.0 µAVEB = 3 V, IC = 0
— — 0.3 V IC = 20 mA, IB = 4 mA
50 — 180 VCE = 5 V, IC = 5 mA
1.8 2.4 — GHz VCE = 5 V, IC = 20 mA
— 200 — mV VCC = 5 V, IC = 5 mA,
25 V
15 V
3V
50 mA
150 mW
= 10 µA, IE = 0
C
f = 930 MHz
2
Maximum Collector Dissipation Curve
150
(mW)
C
2SC4196
DC Current Transfer Ratio vs.
Collector Current
200
FE
160
VCE = 5 V
Pulse
100
50
Collector Power Dissipation P
0
50
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
4
VCE = 5 V
Pulse
(GHz)
3
T
2
1
100 150
120
80
40
DC Current Transfer Ratio h
0
512
Collector Current I
Collector Output Capacitance vs.
Collector to Base Voltage
1.1
1.0
IE = 0
f = 1 MHz
(pF)
ob
0.9
0.8
0.7
10 20 50
(mA)
C
Gain Bandwidth Product f
0
512
Collector Current I
10 20 50
(mA)
C
Collector Output Capacitance C
0.6
512
10 20 50
Collector to Base Voltage V
CB
(V)
3
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