HIT 2SC4126 Datasheet
Application
VHF and UHF wide band amplifier
Outline
MPAK-4
2SC4126
Silicon NPN Epitaxial
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC4126
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 1.0 1.5 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
Power gain PG 9.0 11.0 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 1.5 3.0 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “MI–”.
15——V I
——1 µAVCB = 12 V, IE = 0
——1 µAVCE = 10 V, RBE = ∞
——1 µAVEB = 1 V, IC = 0
50 — 250 VCE = 5 V, IC = 20 mA
4.5 6.0 — GHz VCE = 5 V, IC = 20 mA
15 V
11 V
2V
50 mA
150 mW
= 10 µA, IE = 0
C
f = 900 MHz
f = 900 MHz
2
2SC4126
Maximum Collector Dissipation Curve
150
(mW)
C
100
50
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
200
FE
160
120
VCE = 5 V
Pulse
Typical Output Characteristics
20
Pulse
16
(mA)
C
12
8
150
125
100
75
50
4
= 25 µA
Collector Current I
15010050
I
B
0
Collector to Emitter Voltage V
681042
(V)
CE
Gain Bandwidth Product vs. Collector
Current
10
VCE = 5 V
8
(GHz)
T
6
80
40
DC Current Transfer Ratio h
0
12 20510 50
Collector Current I
(mA)
C
4
2
Gain Bandwidth Product f
0
12 1052050
Collector Current I
(mA)
C
3
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