HIT 2SC4046 Datasheet
Application
High voltage amplifier
Outline
TO-126 MOD
2SC4046
Silicon NPN Epitaxial
1. Emitter
2. Collector
1
2
3
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation PC*
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
CBO
CEO
EBO
C
1
120 V
120 V
5V
0.2 A
8W
2SC4046
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 3.5 — pF VCB = 30 V, f = 1 MHz, IE = 0
Note: 1. The 2SC4046 is grouped by hFE as follows.
Grade D E
h
FE
250 to 500 400 to 800
120 — — V IC = 10 µA, IE = 0
120 — — V IC = 1 mA, RBE = ∞
5——VI
= 10 µA, IC = 0
E
——10µAVCB = 80 V, IE = 0
1
250 — 800 VCE = 5 V, IC = 10 mA
— — 1.0 V
— — 1.0 V IC = 200 mA, IB = 20 mA
— 350 — MHz VCE = 10 V, IC = 50 mA
Maximum Collector Dissipation Curve
12
10
8
6
4
2
Collector power dissipation Pc (W)
0 50 150100
Case Temperature T
C
(°C)
Area of Safe Operation
1.0
Single Pulse
Ta = 25°C
(A)
C
DC Operation
= 25°C
T
C
0.1
Collector Current I
0.01
1 10 100 1,000
Collector to emitter Voltage V
PW = 1 ms
(25 V, 0.4 A)
(80 V, 0.125 A)
(80 V, 0.1 A)
(120 V, 0.055 A)
(120 V, 0.05 A)
CE
(V)
2
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