HIT 2SC3867 Datasheet
Application
• UHF frequency converter
• Wide band amplifier
Outline
2SC3867
Silicon NPN Epitaxial
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
CBO
CEO
EBO
C
C
20 V
11 V
3 V
50 mA
150 mW
2SC3867
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Collector to emitter saturation
voltage
DC current transfer ratio h
Gain bandwidth product f
Collector output capacitance Cob — 0.8 1.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Conversion gain CG 10 14 — dB VCC = 10 V, IC = 1 mA,
Noise figure NF — 10 14 dB f
Note: Marking is “DI–”
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
V
CE(sat)
FE
T
20 — — V IC = 10 µA, IE = 0
11 — — V IC = 1 mA, RBE = ∞
3 — — V IE = 10 µA, IC = 0
— — 0.5 µA VCB = 15 V, IE = 0
— — 0.7 V IC = 10 mA, IB = 5 mA
45 — 200 VCE = 10 V, IC = 5 mA
2.5 3.8 — GHz VCE = 10 V, IC = 10 mA
f = 900 MHz,
= 930 MHz, (–5dBm),
osc
f
= 30 MHz
out
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