HIT 2SC3836 Datasheet

Application

Low frequency amplifier, switching

Outline

SPAK

2SC3836

Silicon NPN Epitaxial

1

2

3

1. Emitter

2. Collector

3. Base

2SC3836

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

Collector to emitter breakdown
voltage

Emitter to base breakdown
voltage

Collector cutoff current I
Base to emitter voltage V
DC current transfer ratio h

Collector to emitter saturation
voltage

V

(BR)CBO

V

(BR)CEO

V

(BE)EBO

CBO

BE

FE1

h

FE2

V

CE(sat)

60——V I

50——V I

15——V I

——1 µAVCB = 50 V, IE = 0
— — 0.75 V VCE = 6 V, IC = 1 mA
800 — 2000 VCE = 6 V, IC = 100 mA

500 — — VCE = 6 V, IC = 1 mA
— — 0.3 V IC = 300 mA, IB = 30 mA

60 V
50 V
15 V
300 mA
300 mW

= 10 µA, IE = 0

C

= 1 mA, RBE = ∞

C

= 10 µA, IC = 0

E

(pulse test)

(pulse test)

2