HIT 2SC3553 Datasheet
Application
Low frequency amplifier
Outline
SPAK
2SC3553
Silicon NPN Epitaxial
1
2
3
1. Emitter
2. Collector
3. Base
2SC3553
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
h
V
CBO
FE1
FE2
CE(sat)
voltage
Base to emitter voltage V
BE
Notes: 1. The 2SC3553 is grouped by h
2. Pulse test
BCD
60 to 120 100 to 200 160 to 320
35——V I
35——V I
4 ——V I
— — 0.5 µAVCB = 20 V, IE = 0
1
*
60 — 320 VCE = 3 V, IC = 10 mA
10 — — VCE = 3 V, IC = 500 mA*
— 0.2 0.6 V IC = 150 mA, IB = 15 mA*
— 0.64 — V VCE = 3 V, IC = 10 mA
as follows.
FE1
35 V
35 V
4V
500 mA
300 mW
= 10 µA, IE = 0
C
= 1 mA, RBE = ∞
C
= 10 µA, IC = 0
E
2
2
See characteristic curves of 2SC1213.
2
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