HIT 2SC3512 Datasheet

Application

UHF / VHF wide band amplifier

Outline

2SC3512

Silicon NPN Epitaxial

2SC3512

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V

CBO

15 V

Collector to emitter voltage V

CEO

11 V

Emitter to base voltage V

EBO

2 V

Collector current I

C

50 mA

Collector power dissipation P

C

600 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

Collector to cutoff current I
Emitter cutoff current I
Collector cutoff current I
DC current transfer ratio h
Collector output capacitance Cob — 1.2 1.6 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
Power gain PG — 10.5 — dB VCE = 5 V, IC = 20 mA,

Noise figure NF — 1.6 — dB VCE = 5 V, IC = 5 mA,

V

(BR)CBO

CEO

EBO

CBO

FE

T

15 — — V IC = 10 µA, IE = 0

— — 1 µA VCE = 10 V, RBE = ∞
— — 1 µA VEB = 1 V, IC = 0
— — 1 µA VCB = 12 V, IE = 0
50 120 250 VCE = 5 V, IC = 20 mA

— 6.0 — GHz VCE = 5 V, IC = 20 mA

f = 900 MHz

f = 900 MHz