HIT 2SC3494 Datasheet
Application
FM RF/IF amplifier
Outline
SPAK
2SC3494
Silicon NPN Epitaxial Planar
1
2
3
1. Emitter
2. Collector
3. Base
2SC3494
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
Collector output capacitance Cob — 1.8 3.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Noise figure NF — 5.0 — dB VCE = 6 V, IE = –1 mA,
Power gain PG 26 29 — dB VCE = 6 V, IE = –1 mA,
Note: 1. The 2SC3494 is grouped by hFE as follows.
BC
60 to 120 100 to 200
30——V I
30——V I
5 ——V I
— — 0.5 µAVCB = 18 V, IE = 0
— — 0.5 µAVEB = 2 V, IC = 0
1
60 — 200 VCE = 12 V, IC = 2 mA
— 0.63 0.75 V VCE = 12 V, IC = 2 mA
— 0.6 1.1 V IC = 10 mA, IB = 1 mA
13 17 — VCE = 6 V, IE = –1 mA,
30 V
30 V
5V
100 mA
300 mW
= 10 µA, IE = 0
C
= 1 mA, RBE = ∞
C
= 10 µA, IC = 0
E
f = 1 MHz, R
= 500 Ω
g
f = 10.7 MHz
f = 100 MHz
See characteristic curves of 2SC460.
2
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