HIT 2SC3391 Datasheet
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Mixer, Local oscillator
Outline
SPAK
2SC3391
ADE-208-1084 (Z)
1st. Edition
Mar. 2001
1
2
3
1. Emitter
2. Collector
3. Base
2SC3391
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 0.9 1.2 pF VCB = 10 V, IE = 0, f = 1 MHz
Power gain PG 17 20 — dB VCE = 6 V, IC = 1 mA,
Noise figure NF — 3.5 5.5 dB VCE = 6 V, IC = 1 mA,
Note: 1. The 2SC3391 is grouped by hFE as follows.
BC
60 to 120 100 to 200
30——V I
20——V I
4 ——V I
— — 0.5 µAVCB = 10 V, IE = 0
1
60 — 200 VCE = 6 V, IC = 1 mA
— 0.72 — V VCE = 6 V, IC = 1 mA
— 0.17 — V IC = 20 mA, IB = 4 mA
450 940 — MHz VCE = 6 V, IC = 5 mA
30 V
20 V
4V
20 mA
200 mW
= 10 µA, IE = 0
C
= 1 mA, RBE = ∞
C
= 10 µA, IC = 0
E
f = 100 MHz
R
= 50 Ω, f = 100 MHz
g
See characteristic curves of 2SC535.
2
Loading...