General Semiconductor ZY100, ZY12, ZY13, ZY11, ZY110 Datasheet

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ZY1, ZY11 THRU ZY200

ZENER DIODES

DO-41 Plastic

min. 1.0 (25.4)

max. 0.11 (2.7)

0.20 (5.2)

Cathode

max.

Mark

 

1.0 (25.4)

max. 0.035 (0.9)

min.

 

Dimensions are in inches and (millimeters)

FEATURES

Silicon Power Zener Diodes

For use in stabilizing and clipping circuits with high power rating

The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances are available upon request.

MECHANICAL DATA

Case: DO-41 Plastic Case

Weight: approx. 0.34 g

MAXIMUM RATINGS

Ratings at 25°C ambient temperature unless otherwise specified.

 

SYMBOL

VALUE

UNIT

 

 

 

 

Zener Current (see Table “Characteristics”)

 

 

 

 

 

 

 

Power Dissipation at Tamb = 25°C

Ptot

2.01)

Watts

Junction Temperature

Tj

150

°C

 

 

 

 

Storage Temperature Range

TS

– 55 to +150

°C

 

 

 

 

 

SYMBOL

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

Thermal Resistance

RthJA

601)

°C/W

Junction to Ambient Air

 

 

 

 

 

 

 

 

 

 

 

NOTES:

(1) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.

12/16/98

ZY1, ZY11 THRU ZY200

ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

 

 

Zener

Dynamic

Temp. coeff.

 

Reverse

 

 

 

 

voltage

 

 

 

voltage(2)

resistance

of Zener volt.

 

Admissible

 

 

 

at

 

 

 

at

 

 

at IZT

 

at

Test

Zener current(1)

 

 

 

IZT

f = 1 kHz

 

IZT

current

IR= 0.5µA

at Tamb = 25°C

Type

 

 

 

 

max

αVZ (10–4 / K)

 

 

IZ (mA)

VZ (V)

 

 

rzj (Ω)

IZT (mA)

VR (V)

ZY1

(3)

0.71 … 0.82

0.5 (< 1)

-26 … -16

100

_

1000

 

 

ZY11

10.4 … 11.6

4

(< 7)

+5

… +10

50

> 9.2

135

ZY12

11.4 … 12.7

4

(< 7)

+5

… +10

50

> 10

120

ZY13

12.4 … 14.1

5

(< 10)

+5

… +10

50

> 10.7

110

ZY15

13.8 … 15.8

5

(< 10)

+5

… +10

50

> 12

98

ZY16

15.3 … 17.1

6

(< 15)

+6

… +11

25

> 13.3

90

ZY18

16.8 … 19.1

6

(< 15)

+6

… +11

25

> 14.7

80

ZY20

18.8 … 21.2

6

(< 15)

+6

… +11

25

> 16.5

72

ZY22

20.8 … 23.3

6

(< 15)

+6

… +11

25

> 18.3

66

ZY24

22.8 … 25.6

7

(< 15)

+6

… +11

25

> 20.1

60

ZY27

25.1 … 28.9

7

(< 15)

+6

… +11

25

> 22.5

53

ZY30

28

… 32

8

(< 15)

+6

… +11

25

> 25.1

48

ZY33

31

… 35

8

(< 15)

+6

… +11

25

> 27.8

44

ZY36

34

… 38

21

(< 40)

+6

… +11

10

> 30.2

40

ZY39

37

… 41

21

(< 40)

+6

… +11

10

> 32.9

37

ZY43

40

… 46

24

(< 45)

+7

… +12

10

> 35.6

33

ZY47

44

… 50

24

(< 45)

+7

… +12

10

> 39.2

30

ZY51

48

… 54

25

(< 60)

+7

… +12

10

> 42.8

27

ZY56

52

… 60

25

(< 60)

+7

… +12

10

> 47.3

25

ZY62

58

… 66

25

(< 80)

+8

… +13

10

> 51.7

21

ZY68

64

… 72

25

(< 80)

+8

… +13

10

> 57.1

20

ZY75

70

… 79

30

(< 100)

+8

… +13

10

> 63.2

18

ZY82

77

… 88

30

(< 100)

+8

… +13

10

> 68.6

16

ZY91

85

… 96

60

(< 200)

+9

… +13

5

> 75.7

15

ZY100

94

… 106

60

(< 200)

+9

… +13

5

> 83.7

13

ZY110

104 …116

80

(< 250)

+9

… +13

5

> 92.6

12

ZY120

114 … 127

80

(< 250)

+9

… +13

5

> 101.6

11

ZY130

124 … 141

110 (< 300)

+9

… +13

5

> 110.5

10

ZY150

138 … 156

110 (< 300)

+9

… +13

5

> 123

9

ZY160

153 …171

150 (< 350)

+9

… +13

5

>136

8.5

ZY180

168 … 191

150 (< 350)

+9

… +13

5

> 149

8

ZY200

188 … 212

150 (< 350)

+9

… +13

5

> 167

7.5

NOTES:

(1)Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case

(2)Tested with pulses tp = 5 ms

(3)The ZY1 is a silicon diode operated in forward direction. Hence, the index of all parameters ratings should be “F” insteadof “Z”. Connect the cathode lead to the negative pole

General Semiconductor ZY100, ZY12, ZY13, ZY11, ZY110 Datasheet

RATINGS AND CHARACTERISTIC CURVES ZY1, ZY11 THRU ZY200

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