FUJI ELECTRIC MS5F6509 SPECIFICATION

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

IGBT MODULE

(RoHS compliant product)

2MBI450U4N-120-50

MS5F 6507

Feb. 14 ’06

H.Kaneda

M.Watanabe

K.Yamada

T.Miyasaka

MS5F6507

1

a

14

H04-004-07b

R e v i s e d R e c o r d s

Date

Feb. -14 -’06

Classi-

fication

Enactment

Ind. Content

Applied

date

Issued

Drawn Checked Checked Approved

M.W atanabe

K. Yamada

date

Sep. -20 -’07 K. Yamada

Revision

a

Revised Outline Drawing (P3/14)

S. Miyashit aT.K oga

T.Miyasaka

MS5F6507

a

2

14

H04-004-06b

2MBI450U4N-120-50

　(RoHS compliant product)

1. Outline Drawing ( Unit : mm )

OUT

a

PN

2. Equivalent circuit

(2)

PC

T1

[Thermistor]

T2

G1

E1

OUT

(3,4)

G2

E2

N

(1)

a

3

MS5F6507

14

H04-004-03a

Storage temperature

Lead resistance,

Zero gate voltage

Gate-Emitter

T=25/50

o

C

T=100

o

C

T=25

o

C

Items

Tj=125

o

C

Tj=25

o

C

VF

Tj=25

o

C

Tj=125

o

C

VF

max.

Characteri st ics

min.

Tc=25

o

C

Tj=25

o

C

typ.

4. Electrical ch aracteristics ( at Tj = 25

o

C un less otherwise specified )

Isolation

Tc=80

o

C

Tc=25

o

C

Tc=80

o

C

3. Absolute Maximu m Rating s ( at Tc= 25

o

C unl ess otherwise specified )

Maxim um

Tj=125

o

C

Screw

Tj=125

o

C

VCE(sat)

Tj=25

o

C

Contact Thermal resistance

5. Thermal resi stance characteristics

min.

typ.

max.

Characteri st ics

Collector-Emitter voltage Gate-Emitter voltage

Collector current

Collector Power Dissipation 1 device Junction temperature

between terminal and copper base (*1)

voltage

between thermistor and others (*2) Mounting (*3)

Torque

Terminals (*4)

Symbols Conditi ons

VCES VGES

Ic Continuous

Icp 1ms

-Ic

-Ic pulse 1ms Pc Tj Tstg

Rati ngs

1200

±20 600 450

1200

900 450

900 2080 +150

-40 to +125

Units

V V

A

W

o

C

Viso AC : 1min. 2500 VAC

-

3.5

4.5

N m

(*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5 to 3.5 Nm (M5) (*4) Recommendable Value : 3.5 to 4.5 Nm (M6)

Items Conditi onsSymbols

VCE=1200V VGE=0V VCE=0V VGE=±20V VCE=20V Ic=450mA Ic=450A VGE=15V

collector current

leakage current

threshold voltage

Collector-Emitter

ICES - - 3.0

IGES

VGE(th)

VCE(sat) (terminal)

saturation voltage

(chip)

Input capacitance

Cies

VCE=10V,VGE=0V,f=1MHz -

ton Vcc=600V - 0.32 1.20

Turn-on time

Inverter

tr Ic=450A - 0.10 tr(i) VGE=±15V - 0.03

Turn-off time

toff RG=1.1Ω tf - 0.07 0.30

IF=450A

Forward on voltage

(terminal)

VGE=0V

(chip)

Reverse recovery time

terminal-chip (*5)

Resistance

B value B

Thermistor

trr

IF=450A -

R lead 1.00 - mΩ

R

(*5) Biggest internal terminal resistance among arm.

- - 600

4.5 6.5 8.5

- 2.40 2.55

-

2.60

- 1.90 2.05

-

2.10 50

0.60

0.41 1.00

-

2.10 2.25

- 2.20 -

- 1.65 1.80

-

1.75 -

- 0.35

-

5000

465 495 520

3305

3375 3450 K

Units

mA

nA

V

- nF

-

us

V

us

-

Ω

Items Symbols Conditi ons Units

(1 device) (*6) (*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.

Rth(j-c)Thermal resistance(1device)

IGBT -- 0.06

Rth(c-f) with Thermal Compound

- -

0.0167- -

MS5F6507

0.10FWD

o

C/W

4

14

H04-004-03a

a

6.Recommend way of modu le mountin g to Heat sink Clamping

(1) Initial : 1/3 specified torque, sequence (1)

→

(2)→(3)→(4)

(2) Final

Full specified torque (3.5 Nm),sequence(4)

(3)→(2)→(1)

Lo go of product ion

Lo t.No.

Place of manufacturing (code)

7. Indi cation on module

450A 1200V

10. Definitio ns of switching time

9. Storage and transportation notes

The module should be stored at a standard temperature of 5 to 35

o

C and humidity of 45 to 75% .

8. Appl icable category

- Products quantity in a packing box

11. Packin g and Labeling

Display on the packing box

- Logo of production

- Type name

- Lot No

Heat sink

Module

：

→

(3)

(2)

(1)

(4)

Mounting holes

2MBI450U4N-120-50

This specification is applied to IGBT-Module named 2MBI450U4N-120-50.

•

Be careful to solderability of the terminals if the module has passed over one year from manufacturing date, under the above storage condition.

Store modules in a place with few temperature changes in order to avoid condensation on the

•

module surface.

Avoid exposure to corrosive gases and dust.

•

Avoid excessive external force on the module.

•

Store modules with unprocessed terminals.

•

Do not drop or otherwise shock the modules when transporting.

•

0V

V

L

Vcc

R

G

VGE

VCE

Ic

GE

V

CE

Ic

0V 0A

10%

90%

～

0V

t

r r

I

r r

Ic

～

90%

10% 10%

t

r ( i )

t

r

t

o n

～

V

CE

～

t

o f f

90%

t

f

MS5F6507

5

a

14

H04-004-03a