Fairchild Semiconductor MMBTA05 Datasheet
MPSA05/MMBTA05
MPSA05/MMBTA05
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier
applications at collector currents to 300mA.
• Sourced from process 10.
TO-92
Absolute Maximum Ratings T
1
1. Emitter 2. Base 3. Collector
=25°C unless otherwise noted
C
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
stg
Electrical Characteristics
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 4.0 V
Collector current - Continuous 500 mA
Junction and Storage Temperature -55 ~ +150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 60 V
Emitter-Base Breakdown Voltage IC = 100µA, IC = 0 4 V
Collector Cutoff Current VCE = 60V, IB = 0 0.1 µA
Emitter Cutoff Current VCB = 60V, IE = 0 0.1 µA
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
DC Current Gain IC = 10mA, VCE = 1.0V
= 100mA, VCE = 1.0V
I
C
Collector-Emitter Saturation Voltage IC = 100mA, IB = 10mA 0.25 V
Base-Emitter On Voltage IC = 100mA, VCE = 1.0V 1.2 V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product IC = 10mA, VCE = 2V,
f = 100MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
3
2
SOT-23
1
Mark: 1H
1. Base 2. Emitter 3. Collector
100
100
100 MHz
Thermal Characteristics
Symbol Parameter
P
D
R
θJC
R
θJA
* Device mounted on FR-4 PCB 1.6” × 0.06"
©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 357 °C/W
TA=25°C unless otherwise noted
Max.
MPSA05 *MMBT A05
625
5
350
2.8
Units
mW
mW/°C
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
MPSA05/MMBTA05
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
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