Fairchild Semiconductor MMBT918, PN918 Datasheet
Discrete POWER & Signal
Technologies
PN918 / MMBT918
PN918
C
B
E
TO-92
MMBT918
C
SOT-23
Mark: 3B
B
E
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 15 V
Collector-Base Voltage 30 V
Em i t ter - Bas e V oltage 3. 0 V
Collector Current - Continuous 50 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN918 *MMBT918
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total De vice Di ssip atio n
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
°C/W
NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO(
sus
V
(BR)CBO
V
(BR)EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF Noise Figure IC = 1.0 m A, VCE = 6.0 V,
Collector-Emitter Sustaining Voltage* IC = 3.0 m A, IB = 0 15 V
)
C oll ec tor -Base Br eak down Volt age IC = 1.0 µA, IE = 0 30 V
Em i t ter - Bas e B r e akdown Voltage
= 10 µA, IC = 0
I
E
Colle c tor Cu tof f Cu rr ent VCB = 15 V, I
= 0
E
3.0 V
VCB = 15 V, TA = 150°C
DC Cu r rent Ga in IC = 3.0 m A, VCE = 1.0 V 20
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.4 V
)
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 1.0 V
)
Current Gain - Bandwidth Product IC = 4.0 m A, VCE = 10 V,
600 MHz
f = 100 MHz
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz
VCB = 0, IE = 0, f = 1.0 MHz
Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 MHz 2.0 pF
RG = 400Ω, f = 60 MHz
0.01
1.0
1.7
3.0
6.0 dB
µ
µ
A
A
pF
pF
PN918 / MMBT918
FUNCTIONAL TEST
G
pe
P
O
η
Ampl ifier Po wer Gain VCB = 12 V, IC = 6.0 mA,
Power Output V
Collector Efficiency VCB = 15 V, IC = 8.0 mA,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 20 0 M Hz
= 15 V, IC = 8.0 mA,
CB
f = 50 0 M Hz
f = 50 0 M Hz
15 dB
30 mW
25 %
DC Typical Characteristics
PN918 / MMBT918
NPN RF Transistor
(continued)
Typical Pulsed Current Gain
vs Collector Current
100
Vce = 5V
90
80
125 ° C
70
60
25 °C
50
40
- 40 °C
30
20
0.1 0.2 0.5 1 2 5 10 20 50
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
Base-Emitter Saturatio n
Voltage vs Collector Current
ββ
= 10
1
- 40 °C
0.8
0.6
0.4
BESAT
V - BASE-EMIT TER VOLTAGE (V)
0.1 1 10 30
I - COLLECTOR CURRENT (mA)
C
25 °C
125 °C
Colle ctor-Em itter Saturation
Voltage vs Collector Current
0.3
ββ
= 10
125 °C
25 °C
- 40 °C
0.1 1 10 30
I - COLLECTOR CURRENT (mA)
C
V - COLLECTOR-EMITTER VOLTAGE (V)
0.25
0.2
0.15
0.1
0.05
CESAT
Base-Emitter ON Voltage vs
Collector Current
1
V = 5V
CE
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1 1 10 20
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
25 °C
125 °C
I - COLLE CTO R CURR ENT (m A)
C
Collector-Cutoff Current
vs Ambient Temperature
5
V = 20V
CB
1
CBO
0.1
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( C)
A
°
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