Fairchild Semiconductor MMBT5771 Datasheet
2N5771 MMBT5771
C
B
E
PNP Switching Transistor
This device is designed for very high speed saturate switching at
collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.
TO-92
C
SOT-23
Mark: 3R
2N5771 / MMBT5771
Discrete POWER & Signal
Technologies
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 15 V
Collector-Base Voltage 15 V
Em i t ter - Bas e V olt ag e 4. 5 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Units
2N5771 *MMBT5771
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
PNP Switching Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 3.0 m A, IB = 0 15 V
Collector-Emitter Breakdown Voltage IC = 100 µA, VBE = 0 15 V
C oll ec t or -Base Breakd ow n Volt age
= 100 µA, IE = 0
I
C
Em i t ter - Bas e B r e akdown Vol tage IE = 100 µA, I
= 0 4.5 V
C
15 V
Colle c tor Cu tof f Cu r ren t VCB = 8.0 V, IE = 0 10 nA
Colle c tor Cu tof f Cu r ren t VCE = 8.0 V, VBE = 0
= 8.0 V, VBE = 0, TA= 125°C
V
Emit ter Cutoff C u rre nt VEB = 4.5 V, I
DC Cu r re n t Ga in IC = 1.0 m A, VCE = 0.5 V
Collector-Emitter Saturation Voltage IC = 1.0 m A, IB = 0.1 mA
)
Base-Emitter Saturation Voltage IC = 1.0 m A, IB = 0.1 mA
)
CE
= 10 mA, VCE = 0.3 V
I
C
= 10mA ,V
I
C
= 50 mA, VCE = 1.0 V
I
C
= 10 mA, IB = 1.0 mA
I
C
= 50 mA, IB = 5.0 mA
I
C
= 10 mA, IB = 1.0 mA
I
C
= 50 mA, IB = 5.0 mA
I
C
= 0 1.0
C
= 0.3V, TA = -55°C
CE
35
50
20
40
0.75
10
5.0
120
0.15
0.18
0.6
0.8
0.95
1.5
nA
µ
µ
A
A
V
V
V
V
V
V
2N5771 / MMBT5771
SMALL SIGNAL CHARACTERISTICS
C
cb
C
eb
h
fe
Collector-Base Capacitance VCB = 5.0 V, IE = 0,
Em i t ter - Bas e C apac it an ce VBE = 0.5 V, IC = 0,
Small-Signal Current Gain IC = 10 mA, VCE = 10 V,
SWITCHING CHARACTERISTICS
t
s
t
on
t
off
St or age Tim e IC = 10 mA, VCC = 1.5 V,
Turn-On Time IC = 10 mA, VCC = 1.5 V,
Turn-Off Time IC = 10 mA, VCC = 1.5 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 14 0 kHz
f = 14 0 kHz
f = 10 0 M Hz
= IB2 = 1.0 mA
I
B1
= 1.0 m A
I
B
= IB2 = 1.0 mA
I
B1
3.0 pF
3.5 pF
8.5 MHz
20 ns
15 ns
20 ns
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