Fairchild Semiconductor MMBT4355, PN4355 Datasheet
Discrete POWER & Signal
Technologies
PN4355 / MMBT4355
PN4355
C
B
E
TO-92
MMBT4355
C
E
SOT-23
Mark: 81
B
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 67. See TN4033A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 10 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN4355 *MMBT4355
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357 °
625
5.0
350
2.8
mW
mW/°C
°
C/W
C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector- Emitter Sustaini ng
IC = 1.0 mA, IB = 0 60 V
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
= 10 µA, IE = 0
I
C
IE = 10 µA, IC = 0
60 V
5.0 V
Collector-Cutoff Current VCB = 50 V, IE = 0 50 nA
Emitter-Cutoff Current VEB = 5.0 V, VCE = 0
VEB = 4.0 V, IC = 0
DC Cu r re n t Gai n
IC = 100 µA, VCE = 10 V
IC = 1.0mA, VCE = 10 V
= 10 mA, VCE = 10 V
I
C
IC = 100 mA, VCE = 10 V
= 500 mA, VCE = 10 V
I
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
)
Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
)
C
IC = 500 mA, IB = 50 mA
= 1.0 A, IB = 100 mA
I
C
IC = 500 mA, IB = 50 mA
= 1.0 A, IB = 100 mA
I
C
60
75
100
75
75
Base-Emitter On Voltage IC = 500 mA, VCE = 0.5 V
IC = 1.0 A, VCE = 1.0 V
10
100
400
0.15
0.50
1.0
0.9
1.1
1.2
1.1
1.2
µ
nA
A
V
V
V
V
V
V
V
V
PN4355 / MMBT4355
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
h
fe
NF Noise Figure
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 30 pF
Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 110 pF
Small-Signal Current Gain IC = 50 mA, VCE = 10 V,
SWITCHING CHARACTERISTICS
t
on
t
off
Turn -On T ime IC = 500 mA, VCC = 500 mA 100 ns
Turn-Off Time IB1 = IB2 = 50 mA 400 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
f = 100 MHz
= 100 µA, VCE = 10 V,
I
C
RS = 1.0 kΩ, f = 1.0 kHz,
BW = 1.0 Hz
1.0 5.0
1.0 3.0 dB
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