Fairchild Semiconductor MMBT4258, PN4258 Datasheet
PN4258 MMBT4258
C
B
E
PNP Switching Transistor
This device is designed for very high speed saturate switching
at collector currents to 100 mA. Sourced from Process 65.
TO-92
C
SOT-23
Mark: 78
PN4258 / MMBT4258
Discrete POWER & Signal
Technologies
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 12 V
Collector-Base Voltage 12 V
Em i t ter - Bas e V olt ag e 4. 5 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN4258 *MMBT4258
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
PNP Switching Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CES
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CES
Collector-Emitter Breakdown Voltage*
Collector-Emitter Sustaining Voltage* IC = 3.0 m A, IB = 0 12 V
C oll ec t or -Base Breakd ow n Volt age
Em i t ter - Bas e B r e akdown Vol tage IE = 100 µA, I
Colle c tor Cu tof f Cu r ren t VCE = 6.0 V, VBE = 0
ON CHARACTERISTICS*
h
FE
V
V
CE(sat)
BE(sat)
DC Cu r re n t Ga in IC = 1.0 m A, VCE = 0.5 V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
= 100 µA, VBE = 0
I
C
= 100 µA, IE = 0
I
C
= 0 4.5 V
C
= 6.0 V, VBE = 0, TA = 65°C
V
CE
I
= 10 mA, VCE = 3.0 V
C
= 50 mA, VCE = 1.0 V
I
C
IC = 50 mA, IB = 5.0 mA
= 50 mA, IB = 5.0 mA
I
C
12 V
12 V
0.01
5.0
15
30
120
30
0.15
0.5
0.75 0.95
1.5
µ
A
µ
A
V
V
V
V
PN4258 / MMBT4258
SMALL SIGNAL CHARACTERISTICS
f
T
C
ibo
C
cb
Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
f = 10 0 M Hz
= 10 mA, VCE = 10 V,
I
C
f = 10 0 M Hz
Input Capacitance VBE = 0.5 V, IC = 0,
f = 1. 0 MHz
Collector-Base Capacitance VCB = 5.0 V, IE = 0,
f = 1. 0 MHz
700
700
3.5 pF
3.0 pF
SWITCHING CHARACTERISTICS
t
on
t
d
t
r
t
off
t
s
t
f
t
s
Turn-On Time VCC = 1.5 V, V
Delay Time IC = 10 mA, IB1 = 1.0 mA 10 ns
Rise Time 15 ns
Turn-Off Time VCC = 1.5 V, IC = 10mA 20 ns
St or age Tim e IB1 = IB2 = 1.0 mA 20 ns
Fall Time 10 ns
St or age Tim e IC = 10 mA, IB1 = IB2 = 10 mA 20 ns
= 0 V, 15 ns
BE(off)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=545.6E-18 Xti=3 Eg=1.11 Vaf=100 Bf=61.42 Ne=1.5 Ise=0 Ikf=50m Xtb=1.5 Br=1.426 Nc=2 Isc=0
Ikr=0 Rc=3.75 Cjc=2.77p Mjc=.1416 Vjc=.75 Fc=.5 Cje=2.65p Mje=.3083 Vje=.75 Tr=4.109n Tf=118.5p Itf=.5
Vtf=3 Xtf=6 Rb=10)
MHz
MHz
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