Fairchild Semiconductor KSC2383 Datasheet
KSC2383
Color TV Audio Output & Color TV Vertical
Deflection Output
KSC2383
1
1. Emitter 2. Collector 3. Base
TO-92L
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage 160 V
Collector-Emitter Voltage 160 V
Emitter-Base Voltage 6 V
Collector Current 1 A
Base Current 0.5 A
Collector Power Dissipation 900 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
BV
CEO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 1.5 V
V
CE
(on) Base-Emitter On Voltage VCE=5V, IC=5mA 0.45 0.75 V
V
BE
f
T
C
ob
Collector Cut-off Current VCB=150V, IE=0 1 µA
Emitter Cut-off Current VEB=6V, IC=0 1 µA
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 160 V
DC Current Gain VCE=5V, IC=200mA 60 320
Current Gain Bandwidth Product VCE=5V, IC=200mA 20 100 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 20 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y
h
FE
©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
60 ~ 120 100 ~ 200 160 ~ 320
Typical Characteristics
KSC2383
1.4
1.2
1.0
0.8
0.6
0.4
Ic[mA], COLLECTOR CURRENT
0.2
IB = 15mA
EMITTER COMMON
Ta=25oC
IB = 10mA
IB = 6mA
IB = 4mA
IB = 3mA
IB = 2.5mA
IB = 2mA
IB = 1.5mA
IB = 1mA
1000
100
10
, DC CURRENT GAIN
FE
h
IB = 0.5mA
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
1000
EMITTER COMMON
Ta = 25oC
VCE=10V
100
VCE=5V
, DC CURRENT GAIN
FE
h
10
100 1000
VCE=1V
IC[mA], COLLECTOR CURRENT
1
0.1
0.01
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
1E-3
1 10 100 1000
IC[mA], COLLECTOR CURRENT
EMITTER COMMON
IC/IB=10
IC/IB=5
VCE=10V
VCE=5V
EMITTER COMMON
Ta = 25oC
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
1.0
EMITTER COMMON
IC/IB=10
0.8
0.6
0.4
0.2
[A], COLLECTOR CURRENT
C
I
0.0
0.0 0.2 0.4 0.6 0.8 1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
1000
EMITTER COMMON
f = 1MHz
Ta = 25oC
100
10
[pF], CAPACITANCE
ob
C
1
1 10 100 1000
VCB[V], COLLECTOR BASE VOLTAGE
Rev. B1, September 2002
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