Fairchild Semiconductor KA5S12656-TU, KA5S1265-YDTU, KA5S1265-TU, KA5S09654QT-YDTU, KA5S09654QT-TU Datasheet

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KA5S-SERIES

KA5S0765C/KA5S09654QT/KA5S0965/ KA5S12656/KA5S1265

Fairchild Power Switch(FPS)

Features

• Wide Operating Frequency Range Up to 150Khz

• Lowest Cost SMPS Solution

• Lowest External Components

• Low Start-up Current (max:170uA)

• Low Operating Current (max:12mA)

• Internal High Voltage SenseFET

• Over Voltage Protection With Latch Mode (Min23V)

• Over Load Protection With Latch Mode

• Over Current Protection With Latch Mode

• Internal Thermal Protection With Latch Mode

• Pulse By Pulse Over Current Limiting

• Under Voltage Lockout With Hystere si s

• External Sync. Terminal

Internal Block Diagram

V

CC

3

V

UVLO

CC

Soft Start

& Sync

Feedback

5

4

VREF

0.95mA

15/9V

4µA

OLP

(Vfb=7.5V)

TSD

(Tj=160°C)

OVP

(V

=25V)

CC

+

-

Vth.sy

2.5V

VREF V

CC

(V

-

+

OCP

S

Vref

7V 6V

R

=1.1V)

2.5V

OSC

-

+

1µs Window Open Circuit

+

-

CLK

Voffset

Shutdown Latch

Power-on Reset

(VCC=6.5V)

TO-3P-5L

1

TO-220F-5L

1

1. Drain 2. Gnd 3. V

Bias

VREF UVLO

Q

S R

S

Q

R

TO-220-5L

1

4. FeedBack 5. Sync.

CC

SenseFET

V

Rsense

S

Drain

1

GND

2

Rev.1.0.2

KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5 S 1265

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Value Unit

KA5S0765C

Maximum drain voltage V Drain-gate voltage(R

=1MΩ) V

GS

Gate-source(GND) voltage V Drain current pulsed

(1)

Continuous drain current (Tc = 25°C) I Continuous drain current (Tc = 100°C) I Single pulsed avalanch current

(3)

(Energy

(2)

)IAS(EAS) 20(570) A(mJ)

Maximum supply voltage V Input voltage range

Total power dissipation Operating junction temperature. T

Operating ambient temperature. T Storage temperature range. T

D,MAX

DGR

GS

I

DM

D D

CC,MAX

V

FB

V

SS

D

(Watt H/S) 135 W

P

Derating 1.1 W / °C

J

A

STG

650 V 650 V ±30 V

28 ADC

7.0 ADC

5.6 ADC

30 V

-0.3 to V

CC

V

-0.3 to 8 V

+160 °C

-25 to +85 °C

-55 to +150 °C

KA5S09654QT

Maximum drain voltage V Drain-gate voltage(R Gate-source(GND) voltage V Drain current pulsed Continuous drain current (Tc = 25°C) I Continuous drain current (Tc = 100°C) I Single pulsed avalanch current Maximum supply voltage V

Input voltage range

Total power dissipation Operating junction temperature. T

Operating ambient temperature. T Storage temperature range. T

=1MΩ) V

GS

(1)

(3)

(Energy

(2)

)IAS(EAS) 25(660) A(mJ)

D

(Watt H/S) 160 W

P

Derating 1.28 W / °C

D,MAX

DGR

GS

I

DM

D D

CC,MAX

V

FB

V

SS

J

A

STG

650 V 650 V ±30 V

49 ADC

9.0 ADC

5.7 ADC

30 V

-0.3 to V

CC

V

-0.3 to 8 V

+160 °C

-25 to +85 °C

-55 to +150 °C

2

KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/

Absolute Maximum Ratings (Continued)

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Value Unit

KA5S0965

Maximum Drain Voltage V Drain-Gate Voltage(R

=1MΩ) V

GS

Gate-Source(GND) Voltage V Drain Current Pulsed

(1)

Continuous Drain Current (Tc = 25°C) I Continuous Drain Current (Tc = 100°C) I Single Pulsed Avalanch Current

(3)

(Energy

(2)

)IAS(EAS) 28(950) A(mJ)

Maximum Supply Voltage V Input Voltage Range

Total Power Dissipation Operating Junction Temperature. T

Operating Ambient Temperature. T Storage Temperature Range. T

D,MAX

DGR

GS

I

DM

D D

CC,MAX

V

FB

V

SS

D

(Watt H/S) 170 W

P

Derating 1.33 W / °C

J

A

STG

650 V 650 V ±30 V

36 ADC

9.0 ADC

5.8 ADC

30 V

-0.3 to V

CC

V

-0.3 to 8 V

+160 °C

-25 to +85 °C

-55 to +150 °C

KA5S12656

Maximum Drain Voltage V Drain-Gate Voltage(R Gate-Source(GND) Voltage V Drain Current Pulsed Continuous Drain Current (Tc = 25°C) I Continuous Drain Current (Tc = 100°C) I Single Pulsed Avalanch Current Maximum Supply Voltage V

Input Voltage Range

Total Power Dissipation Operating Junction Temperature. T

Operating Ambient Temperature. T Storage Temperature Range. T

=1MΩ) V

GS

(1)

(3)

(Energy

(2)

)IAS(EAS) 30(785) A(mJ)

D

(Watt H/S) 160 W

P

Derating 1.28 W / °C

D,MAX

DGR

GS

I

DM

D D

CC,MAX

V

FB

V

SS

J

A

STG

650 V 650 V ±30 V

48 ADC 12 ADC

8.4 ADC

30 V

-0.3 to V

CC

V

-0.3 to 8 V

+160 °C

-25 to +85 °C

-55 to +150 °C

3

KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5 S 1265

Absolute Maximum Ratings (Continued)

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Value Unit

KA5S1265

Maximum Drain Voltage V Drain-Gate Voltage(R

=1MΩ) V

GS

Gate-Source(GND) Voltage V Drain Current Pulsed

(1)

Continuous Drain Current (Tc = 25°C) I Continuous Drain Current (Tc = 100°C) I Single Pulsed Avalanch Current

(3)

(Energy

(2)

)IAS(EAS) 30(785) A(mJ)

Maximum Supply Voltage V Input Voltage Range

Total Power Dissipation Operating Junction Temperature. T

Operating Ambient Temperature. T Storage Temperature Range. T

D,MAX

DGR

GS

I

DM

D D

CC,MAX

V

FB

V

SS

D

(Watt H/S) 160 W

P

Derating 1.28 W / °C

J

A

STG

650 V 650 V ±30 V

48 ADC 12 ADC

8.4 ADC

30 V

-0.3 to V

CC

V

-0.3 to 8 V

+160 °C

-25 to +85 °C

-55 to +150 °C

Note:

1. Repetitive rating : Pulse width limited by maximum junction temperature

2. L = 10mH, V

3. L = 13uH, starting Tj = 25°C

=50V, RG = 27Ω, starting Tj = 25°C

DD

4

KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/

Electrical Characteristics (SFET Part)

(Ta = 25°C unless otherwise specified)

Parameter Symbol Conditions Min. Typ. Max. Unit

KA5S0765C

Drain-source breakdown voltage BV

Zero gate voltage drain current I

Static drain-source on resistance Forward transconductance

(1)

Input capacitance Ciss Output capacitance Coss - 310 Reverse transfer capacitance Crss - 120 Turn on delay time td(on) V Rise time tr - 55 Turn off delay time td(off) - 80 Fall time tf - 50 Total gate charge

(gate-source+gate-drain) Gate-source charge Qgs - 9.3 -

Gate-drain (Miller) charge Qgd - 29.3 -

DSS

VGS=0V, ID=50µA 650 - - V VDS=Max., Rating, VGS=0V - - 50 µA

DSS

DS

=0.8Max., Rating,

V V

GS

=0V, TC=125°C

- - 200 µA

RDS(on) VGS=10V, ID=4.0A - 1.25 1.6 Ω

gfs VDS=15V, ID=4.0A 3.0 - - S

- 1600 -

GS

=0V, VDS=25V,

V f = 1MHz

DD

=0.5BV

DSS

, ID=7.0A

-25(MOSFET switching time are essentially independent of operating temperature)

V

GS

Qg

=10V, ID=7.0A,

V

DS

=0.5BV

DSS

(MOSFET

--72 Switching time are

Essentially independent of Operating temperature)

pF

nS

nC

KA5S09654QT

Drain-source breakdown voltage BV

Zero gate voltage drain current I

Static drain-source on resistance Forward transconductance

(1)

Input capacitance Ciss Output capacitance Coss - 135 Reverse transfer capacitance Crss - 25 Turn on delay time td(on) V Rise time tr - 75 Turn off delay time td(off) - 130 Fall time tf - 70 Total gate charge

(gate-source+gate-drain) Gate-source charge Qgs - 8 -

Gate-drain (Miller) charge Qgd - 22 -

DSS

VGS=0V, ID=50µA 650 - - V VDS=Max., Rating, VGS=0V - - 200 µA

DSS

DS

=0.8Max., Rating,

V V

GS

=0V, TC=125°C

- - 300 µA

RDS(on) VGS=10V, ID=4.5A - 1.1 1.2 Ω

gfs VDS=50V, ID=4.5A 3.0 - - S

- 1300 V

GS

=0V, VDS=25V,

f = 1MHz

DD

=0.5BV

DSS

, ID=9.0A

-25(MOSFET switching time are essentially independent of operating temperature)

V

GS

Qg

=10V, ID=9.0A,

V

DS

=0.5BV

DSS

(MOSFET

45 -

Switching time are Essentially independent of Operating temperature)

pF

nS

nC

5

KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5 S 1265

Electrical Characteristics (SFET Part; Continued)

(Ta = 25°C unless otherwise specified)

Parameter Symbol Conditions Min. Typ. Max. Unit

KA5S0965

Drain-source breakdown voltage BV

Zero gate voltage drain current I

Static drain-source on resistance Forward transconductance

(1)

Input capacitance Ciss Output capacitance Coss - 190 Reverse transfer capacitance Crss - 78 Turn on delay time td(on) V Rise time tr - 23 55 Turn off delay time td(off) - 85 180 Fall time tf - 30 70 Total gate charge

(gate-source+gate-drain) Gate-source charge Qgs - 12 -

Gate-drain (Miller) charge Qgd - 35 -

DSS

VGS=0V, ID=50µA 650 - - V VDS=Max., Rating, VGS=0V - - 50 µA

DSS

DS

=0.8Max., Rating,

V V

GS

=0V, TC=125°C

- - 200 µA

RDS(on) VGS=10V, ID=4.5A - 0.96 1.2 Ω

gfs VDS=50V, ID=4.5A 5.0 - - S

- 1750 -

GS

=0V, VDS=25V,

V f = 1MHz

DD

=0.5BV

DSS

, ID=9.0A

-2050 (MOSFET switching time are essentially independent of operating temperature)

V

GS

Qg

=10V, ID=9.0A,

V

DS

=0.5BV

DSS

(MOSFET

-7495 Switching time are

Essentially independent of Operating temperature)

pF

nS

nC

KA5S12656

Drain-source breakdown voltage BV

Zero gate voltage drain current I

Static drain-source on resistance Forward transconductance

(1)

Input capacitance Ciss Output capacitance Coss - 300 Reverse transfer capacitance Crss - 61 Turn on delay time td(on) V Rise time tr - 37 Turn off delay time td(off) - 88 Fall time tf - 36 Total gate charge

(gate-source+gate-drain) Gate-source charge Qgs - 20 -

Gate-drain (Miller) charge Qgd - 69 -

DSS

VGS=0V, ID=50µA 650 - - V VDS=Max., Rating, VGS=0V - - 50 µA

DSS

DS

=0.8Max., Rating,

V V

GS

=0V, TC=125°C

- - 200 µA

RDS(on) VGS=10V, ID=6.0A - 0.72 0.9 Ω

gfs VDS=50V, ID=4.0A 5.7 - - S

- 2700 V

GS

=0V, VDS=25V,

f = 1MHz

DD

=0.5BV

DSS

, ID=12.0A

-18(MOSFET switching time are essentially independent of operating temperature)

V

GS

Qg

=10V, ID=12.0A,

V

DS

=0.5BV

DSS

(MOSFET

- - 140 Switching time are

Essentially independent of Operating temperature)

pF

nS

nC

6