Fairchild Semiconductor KA5Q1565RF, KA5Q1265RF, KA5Q12656RT, KA5Q0765RT Datasheet

www.fairchildsemi.com

KA5Q-SERIES

KA5Q0765RT/KA5Q12656RT/KA5Q1265RF/ KA5Q1565RF Fairchi ld Pow er Sw itch( FP S)

Features

• Quasi Resonant Converter Controller

• Internal Burst Mode Control ler for Stand-by Mode

• Pulse by Pulse Current Limiting

• Over Current Latch Protection

• Over Voltage Protection (Vsync: Min. 11V)

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

• Auto-Restart Mode

Internal Block Diagram

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver , thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and controller or R solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in quasi resonant converter as C-TV power supply.

TO-220F-5L

1

1. Drain 2. GND 3. VCC 4. FB 5. Sync

TO-3PF-5L

1

VCC

VCC DRAIN

VCCVCC

3

switching converter

CC

DRAIN

DRAINDRAIN

1

Burst Mode

3.5V/1.25V

5

SYNC

SYNCSYNC

FEEDBACK

FEEDBACKFEEDBACK

4

Sync

7.5V

Normal Mode

4.6V/2.6V

VREF

Ifb

Idelay

1V

+

-

OLP

+

-

12V

OVP

-

Power

on

Reset

+

32V 1%

+

-

+

-

+

OSC

2.5R R

S

Q

R

11V on 12V off

-

+

-

+

Internal

BIAS

LEB

450ns

Offset

S

Q

R

Power on Reset

S

(VCC=6.5V)

VREF

QB

R

Delay

80ns

Thermal

Thermal Thermal

Shut Down

Shut DownShut Down

OCL

UVLO

15V/9V

+

-

Ro

Ron

n

Rof

Roff

f

+

Rsense

-

1V

SOURCE

2

SOURCESOURCE

Rev.1.0.3

KA5Q-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Value Unit KA5Q0765RT

Drain-Gate Voltage(R Gate-Source(GND) Voltage V Drain Current Pulsed Continuous Drain Current (Tc = 25°C) I Continuous Drain Current (Tc = 100°C) I Single Pulsed Avalanch Current Maximum Supply Voltage V

Input Voltage Range

Total Power Dissipation Operating Junction Temperature. T

Operating Ambient Temperature. T Storage Temperature Range. T Thermal Resistance Rthjc 2.7 °C/W

=1MΩ) V

GS

(1)

(3)

(Energy

(2)

DGR

GS

I

DM

D D

650 V ±30 V

28 ADC

7.0 ADC

5.6 ADC

)IAS(EAS) 20(570) A(mJ)

CC,MAX

V

FB

V

Sync

D

P

40 V

-0.3 to V

CC

-0.3 to 13 V 47 W

Derating 0.37 W/°C

J

A

STG

+160 °C

-25 to +85 °C

-55 to +150 °C

V

KA5Q12656RT

Drain-Gate Voltage(RGS=1MΩ) V Gate-Source(GND) Voltage V Drain Current Pulsed

(1)

Continuous Drain Current (Tc = 25°C) I Continuous Drain Current (Tc = 100°C) I

(2)

Single Pulsed Avalanch Current(Energy

)IAS(EAS) 30(950) A(mJ)

Maximum Supply Voltage V Input Voltage Range

Total Power Dissipation Operating Junction Temperature. T

Operating Ambient Temperature. T Storage Temperature Range. T

DGR

GS

I

DM

D D

CC,MAX

V

FB

V

Sync

D

P

Derating 0.4 W/°C

J

A

STG

Thermal Resistance Rthjc 2.5 °C/W

650 V

±30 V

48 ADC 12 ADC

8.4 ADC

40 V

-0.3 to V

CC

V

-0.3 to13 V

55 W

+160 °C

-25 to +85 °C

-55 to +150 °C

Absolute Maximum Ratings

2

(Continued)

KA5Q-SERIES

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Value Unit

KA5Q1265RF

Drain-Gate Voltage(RGS=1MΩ) V Gate-Source(GND) Voltage V Drain Current Pulsed

(1)

Continuous Drain Current (Tc = 25°C) I Continuous Drain Current (Tc = 100°C) I

(2)

Single Pulsed Avalanch Current(Energy

)IAS(EAS) 33(950) A(mJ)

Maximum Supply Voltage V Input Voltage Range

Total Power Dissipation Operating Junction Temperature. T

Operating Ambient Temperature. T Storage Temperature Range. T

DGR

GS

I

DM

D D

CC,MAX

V

FB

V

Sync

P

D

Derating 0.76 W/°C

J

A

STG

Thermal Resistance Rthjc 1.31 °C/W

650 V ±30 V

48 ADC 12 ADC

8.4 ADC

40 V

-0.3 to V

CC

-0.3 to 13 V 95 W

+160 °C

-25 to +85 °C

-55 to +150 °C

V

KA5Q1565RF

Drain-Gate Voltage(RGS=1MΩ) V Gate-Source(GND) Voltage V Drain Current Pulsed

(1)

Continuous Drain Current (Tc = 25°C) I Continuous Drain Current (Tc = 100°C) I

(2)

Single Pulsed Avalanch Current(Energy

)IAS(EAS) 36(1050) A(mJ)

Maximum Supply Voltage V Input Voltage Range

Total Power Dissipation Operating Junction Temperature. T

Operating Ambient Temperature. T Storage Temperature Range. T

DGR

GS

I

DM

D D

CC,MAX

V

FB

V

Sync

D

P

Derating 0.78 W/°C

J

A

STG

Thermal Resistance Rthjc 1.28 °C/W

Note:

1. Repetitive rating : Pulse width limited by maximum junction temperature

2. L = 10mH, V

3. L = 13uH, starting Tj = 25°C

=50V, RG = 27Ω, starting Tj = 25°C

DD

650 V ±30 V

60 ADC 15 ADC

12.0 ADC

40 V

-0.3 to V

CC

-0.3 to 13 V 98 W

+160 °C

-25 to +85 °C

-55 to +150 °C

V

3

KA5Q-SERIES

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter Symbol Conditions Min. Typ. Max. Unit

KA5Q0765RT

Drain-Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Static Drain-Source on Resistance

(1)

Input Capacitance Ciss Output Capacitance Coss - 105 Reverse Transfer Capacitance Crss - 50 Turn on Delay Time td(on) V Rise Time tr - 55 Turn Off Delay Time td(off) - 80 Fall Time tf - 50 Total Gate Charge

(Gate-Source+Gate-Drain) Gate-Source Charge Qgs - 9.3 -

Gate-Drain (Miller) Charge Qgd - 29.3 -

DSS

VGS=0V, ID=50µA 650 - - V VDS=Max., Rating, VGS=0V - - 200 µA

DSS

DS

=0.8Max., Rating,

V V

GS

=0V, TC=85°C

- - 300 µA

RDS(on) VGS=10V, ID=4.0A - 1.3 1.6 Ω

-1110-

GS

=0V, VDS=25V,

V f = 1MHz

DD

=0.5BV

DSS

, ID=7.0A

-25(MOSFET switching time are essentially independent of operating temperature)

V

GS

Qg

=10V, ID=7.0A,

V

DS

=0.5BV

DSS

(MOSFET

-5774 Switching time are

Essentially independent of Operating temperature)

pF

nS

nC

KA5Q12656RT/KA5Q1265RF

Drain-Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Static Drain-Source on Resistance

(1)

DSS

R

DS(on)

DSS

Input Capacitance Ciss Output Capacitance Coss - 185 Reverse Transfer Capacitance Crss - 32 Turn on Delay Time td(on) V Rise Time tr - 120 Turn Off Delay Time td(off) - 200 Fall Time tf - 100 Total Gate Charge

(Gate-Source+Gate-Drain)

Qg

Gate-Source Charge Qgs - 10 Gate-Drain (Miller) Charge Qgd - 30 -

VGS=0V, ID=50µA 650 - - V VDS=Max., Rating, VGS=0V - - 200 µA

=0.8Max., Rating,

V

DS

V

=0V, TC=85°C

GS

- - 300 µA VGS=10V, ID=6A - 0.7 0.9 Ω

- 1820 -

GS

=0V, VDS=25V,

V f = 1MHz

DD

=0.5BV

DSS

, ID=12.0A

-38(MOSFET switching time are essentially independent of operating temperature)

V

GS

=10V, ID=12.0A,

V

DS

=0.5BV

DSS

(MOSFET

-6078 Switching time are

Essentially independent of Operating temperature)

pF

nS

nC

4

KA5Q-SERIES

Absolute Maximum Ratings (SFET Part)

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit

KA5Q1565RF

Drain-Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Static Drain-Source on Resistance

(Note)

DSS

R

DS(ON)VGS

Input Capacitance Ciss

Reverse Transfer Capacitance Crss - 50 Turn on Delay Time td(on) V Rise Time tr - 155 Turn Off Delay Time td(off) - 270 -

Fall Time tf - 125 Total Gate Charge

(Gate-Source+Gate-Drain)

Qg

Gate-Source Charge Qgs - 15 Gate-Drain (Miller) Charge Qgd - 45 -

VGS=0V, ID=50µA 650 - - V VDS=Max., Rating,

V

=0V

GS

=0.8Max., Rating,

V

DS

V

=0V, TC=85°C

GS

- - 200 µA

- - 300 µA

=10V, ID=7.3A - 0.5 0.65 W

V

=0V, VDS=25V,

GS

- 2580 -

f=1MHz

DD

=0.5BV

, ID=14.6A

DSS

-50(MOSFET switching time are essentially independent of operating temperature)

V

=10V, ID=14.6A,

GS

V

DS

=0.8BV

(MOSFET

DSS

-90117 switching time are

essentially independent of operating temperature)

pFOutput Capacitance Coss - 270 -

nS

nC

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

5